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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4833 DESCRIPTION With ITO-220 package Switching power transistor High voltage,high speed PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base voltage Open emitter 500 Collector-emitter voltage Open base 400 7 Emitter-base voltage Open collector Collector current 5 Collector current-Peak 10 2 4 TC=25ae 35 150 -55~150 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature PARAMETER CONDITIONS VALUE UNIT V V V A A A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.57 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4833 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT ton ts tf Collector cut-off current Emitter cut-off current DC current gain DC current gain At rated volatge IC=2.5A ; VCE=2V 10 0.1 25 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A MIN 400 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO TOR NDU ICO E SEM ANG INCH IC=1mA ; VCE=2V 10 Transition frequency IC=0.5A ; VCE=10V 13 Turn-on time Storage time 0.3 IC=2.5A;IB1=0.5A IB2=1A ,RL=60| VBB2=4V 1.3 Fall time 0.1 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4833 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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