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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 DESCRIPTION With TO-3N package High voltage ,high speed APPLICATIONS For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 7 15 30 7.5 UNIT V V V A A A W ae ae Open collector Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10A ;IB=2A; L=50|I IC=10A ;IB=2A IC=10A ;IB=2A VCB=400V; IE=0 VCE=400V; VBE(off)=-1.5V Ta=125ae VEB=5V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V 15 10 7 H MIN 400 2SC2751 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 TYP. MAX UNIT V 1.0 1.5 100 100 1.0 10 80 |I |I |I V V A A mA A Switching times ton ts tf DC current gain CHA IN Turn-on time Storage time Fall time E SEM NG IC=10A ; VCE=5V OND IC TOR UC 1.0 2.5 0.7 |I |I |I s s s IC=10A;IB1=-IB2=2A RL=15| ; VCCO 150V hFE-1 Classifications N 15-30 R 20-40 O 30-60 Y 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2751 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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