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| SMD Type Silicon Power Transistors 2SA1615-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Large current capacity. +0.2 9.70 -0.2 High hFE and low collector saturation voltage. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Base current Total power dissipation Junction temperature Storage temperature * PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC Icp * IB PT Tj Tstg Rating -30 -20 -10 -10 -15 -0.5 1.0 150 -55 to +150 Unit V V V A A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulse test: tp 350 is; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = -20V, IE=0 VEB = -8V, IC=0 VCE = -2V , IC = -0.5A VCE = -2.0 V, IC =-4.0 A VCE(sat) IC = -4A , IB = -0.05A VBE(sat) IC = -4A , IB = -0.05A fT Cob ton tstg tf VCE = -5V , IE = 1.5A VCB = -10V , IE = 0 , f = 1.0MHz IC = -5.0 A, IB1 = -IB2 = 0.125 A, RL = 2.0 , VCC = -10 V 200 160 -0.2 -0.9 180 220 80 300 60 -0.25 -1.2 MHz pF ns ns ns V Min Typ Max -1 -1 600 Unit iA iA hFE Classification Marking hFE L 200 400 300 K 600 3.80 www.kexin.com.cn 1 |
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