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STGW39NC60VD 40 A - 600 V - very fast IGBT Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 Applications High frequency inverters UPS Motor drivers Induction heating TO-247 Description This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW39NC60VD Package TO-247 Packaging Tube STGW39NC60VD January 2008 Rev 7 1/15 www.st.com 15 Contents STGW39NC60VD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 6 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/15 STGW39NC60VD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC(1) IC (1) ICL (2) ICP (3) VGE IF IFSM PTOT Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at 25 C Collector current (continuous) at 100 C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 C Surge non repetitive forward current (tp=10 ms sinusoidal) Total dissipation at TC = 25 C Operating junction temperature Value 600 80 40 220 220 20 30 120 250 - 55 to 150 Unit V A A A A V A A W C 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp = 80%(VCES) , Tj = 150 C, RG = 10 , VGE= 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max (IGBT) Thermal resistance junction-case max (diode) Thermal resistance junction-ambient max Value 0.5 1.5 50 Unit C/W C/W C/W 3/15 Electrical characteristics STGW39NC60VD 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES gfs (1) Static Parameter Test conditions Min. Typ Max. Unit 600 1.8 1.7 3.75 2.5 V V V V A mA nA S Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) Collector-emitter saturation voltage Gate threshold voltage Collector-emitter cut-off current (VGE = 0) Gate-emitter cut-off current (VCE = 0) Forward transconductance VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A,TC=125 C VCE= VGE, IC=1 mA VCE = 600 V VCE= 600 V, TC = 125 C VGE = 20 V VCE = 15 V, IC= 30 A 5.75 500 5 100 20 1. Pulsed: pulse duration = 300 s, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. Max Unit 2900 298 59 126 16 46 pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 19) 4/15 STGW39NC60VD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 30 A, RG=10 , VGE = 15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10, VGE=15 V TC=125 C (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 , VGE=15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 , VGE=15 V TC=125 C (see Figure 18) 33 178 65 68 238 128 ns ns ns ns ns ns Min. Typ. 33 13 2500 32 14 2280 Max. Unit ns ns A/s ns ns A/s Table 7. Symbol Eon (1) Eoff(2) Ets Eon (1) Eoff (2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 30A , RG= 10 VGE= 15V, (see Figure 20) VCC = 390V, IC = 30A , RG= 10 VGE= 15V, TC= 125C (see Figure 20) Min Typ. 333 537 870 618 1125 1743 Max Unit J J J J J J 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/15 Electrical characteristics STGW39NC60VD Table 8. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 30 A IF = 30 A, TC = 125 C IF = 30 A, VR = 50 V, di/dt =100 A/s (see Figure 21) IF = 30 A, VR = 50 V, TC= 125 C, di/dt =100 A/s (see Figure 21) Min Typ. 2.4 1.8 45 56 2.55 100 290 5.8 Max Unit V V ns nC A ns nC A 6/15 STGW39NC60VD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 7/15 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 9. STGW39NC60VD Gate charge vs gate-emitter voltage Figure 10. Capacitance variations Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/15 STGW39NC60VD Figure 14. Thermal impedance Electrical characteristics Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 Tj=25C (Maximum values) Tj=125C (Typical values) Tj=125C (Maximum values) Figure 17. IC vs. frequency VFM(V) 2.2 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = T / RTHJ-C considering T = TJ - TC = 125 C - 75 C = 50 C The conduction losses are: 9/15 Electrical characteristics Equation 2 PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125 C. STGW39NC60VD Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. Typical values @ 125 C for switching losses are used (test conditions: VCE = 390 V, VGE = 15 V, RG = 10 ). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). 10/15 STGW39NC60VD Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Test circuit for inductive load switching Figure 20. Switching waveforms Figure 21. Diode recovery times waveform 11/15 Package mechanical data STGW39NC60VD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/15 STGW39NC60VD Package mechanical data TO-247 mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max . 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 13/15 Revision history STGW39NC60VD 5 Revision history Table 9. Date 17-Nov-2005 05-May-2006 10-Jul-2006 01-Dec-2006 16-May-2007 22-Aug-2007 31-Jan-2008 Document revision history Revision 1 2 3 4 5 6 7 First release Inserted curves Modified value on Absolute maximum ratings Modified value on Dynamic New curves updated:Figure 5 and Figure 6 Added new Figure 17 and new section 2.2: Frequency applications Modified: Table 8: Collector-emitter diode Changes 14/15 STGW39NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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