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| SI4559ADY New Product Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Channel P-Channel P Channel 60 -60 60 FEATURES ID (A)a 5.3 4.7 -3.9 -3.5 8nC 6 nC rDS(on) (W) 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V 0.120 at VGS = -10 V 0.150 at VGS = -4.5 V Qg (Typ) D TrenchFETr Power MOSFET D 100 % Rg & UIS Tested APPLICATIONS D CCFL Inverter RoHS COMPLIANT D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4559ADY-T1--E3 (Lead (Pb)-free) 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET D2 P-Channel MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current (10 ms Pulse Width) Source-Drain Source Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0 1 mH 0.1 TC= 25 _C Maximum Power Dissipation TC= 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS ISM IAS EAS ID Symbol VDS VGS N-Channel 60 "20 5.3 4.3 4.3b, c 3.4b, c 20 2.6 1.7b, c 20 11 6.1 3.1 2 2b, c 1.3b, c -55 to 150 P-Channel -60 Unit V -3.9 -3.2 -3.0b, c -2.4b, c -25 -2.8 -1.7b, c -25 15 11 3.4 2.2 2b, c 1.3b, c _C W mJ A THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t v 10 sec Steady-State P-Channel Typ 53 30 Symbol RthJA RthJF Typ 55 33 Max 62.5 40 Max 62.5 37 Unit _C/W Notes a. Based on TC = 25 _C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 110 _C/W for N-channel and P-channel. Document Number: 73624 S-52667--Rev. A, 02-Jan-06 www.vishay.com 1 SI4559ADY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Static VGS = 0 V, ID = 250 mA Drain-Source Drain Source Breakdown Voltage VDS VGS = 0 V, ID = -250 mA ID = 250 mA ID = -250 mA ID = 250 mA IID = -250 mA VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 _C VDS = -60 V, VGS = 0 V, TJ = 55 _C On-State On State Drain Currentb ID( ) D(on) VDS w 5 V, VGS = 10 V VDS p -5 V, VGS = -10 V VGS = 10 V, ID = 4.3 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = -10 V, ID = -3.1 A VGS = 4.5 V, ID = 3.9 A VGS = -4.5 V, ID = -0.2 A Forward Transconductanceb gf fs VDS = 15 V, ID = 4.3 A VDS = -15 V, ID = -3.1 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 20 -25 0.046 0.1 0.059 0.126 15 8.5 S 0.058 0.120 0.072 0.150 W A 1 -1 60 V -60 55 -50 -6 4 3 -3 100 -100 1 -1 10 -10 mA nA V mV Symbol Test Condition Min Typa Max Unit VDS Temperature Coefficient DVDS/TJ VGS( h) Temperature Coefficient GS(th) DVGS( h)/TJ GS(th) Gate Threshold Voltage VGS( h) GS(th) IGSS Gate-Body Gate Body Leakage Dynamica N-Ch Input Capacitance Ciiss Coss Crss VDS = 30 V, VGS = 10 V, ID = 4.3 A Total Gate Charge Qg VDS = -30 V, VGS = -10 V, ID = -3.1 A N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P Channel P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance P-CH N Ch N-Ch P-Ch N Ch N-Ch P-Ch N-Ch P-Ch N Ch N-Ch N-Channel VDS = 30 V, VGS = 4.5 V, ID = 4.3 A Gate-Source Gate Source Charge Qgs P Channel P-Channel VDS = - 30 V, VGS = -4.5 V, ID = -3.1 A Gate-Drain Gate Drain Charge Qgd d Rg f = 1 MHz P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 665 650 75 95 40 60 13 14.5 6 8 2.3 2.2 2.6 3.7 2 14 3 20 W 20 22 9 12 nC pF Output Capacitance Gate Resistance www.vishay.com 2 Document Number: 73624 S-52667--Rev. A, 02-Jan-06 SI4559ADY New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Dynamica Turn-On Turn On Delay Time td( ) d(on) tr td( ff) d(off) tf td( ) d(on) tr td( ff) d(off) tf N-Channel N Channel VDD = 30 V, RL = 8.8 W ID ^ 3.4 A, VGEN = 10 V, Rg = 1 W P Channel P-Channel VDD = -30 V, RL = 12.5 W ID ^ -2 4 A, VGEN = -10 V Rg =1 W -2.4 A V, N-Channel N Channel VDD = 30 V, RL = 8.8 W ID ^ 3.4 A, VGEN = 4.5 V, Rg = 1 W P Channel P-Channel VDD = -30 V, RL = 12.5 W ID ^ -2 4 A VGEN = -4.5 V, Rg = 1 W -2.4 A, -4 5 V N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 15 30 65 70 15 40 10 30 10 10 15 13 20 35 10 30 25 45 100 105 25 60 15 45 15 15 25 20 30 55 15 45 ns Vishay Siliconix Symbol Test Condition Min Typa Max Unit Rise Time Turn-Off Turn Off Delay Time Fall Time Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source Drain Diode Current Source-Drain Pulse Diode Forward Currenta IS ISM IS = 1.7 A Body Diode Voltage VSD IS = -2 A TC = 25 _C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Body Diode Reverse Recovery Time trr Qrr ta tb N-Channel IF = 1.7 A, di/dt = 100 A/ms, TJ = 25 _C P Channel P-Channel IF = -2 A, di/dt = -100 A/ms, TJ = 25 _C P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Reverse Recovery Rise Time P-Ch 0.8 -0.8 30 30 32 35 25 16 5 14 ns 2.6 -2.8 20 -25 1.2 -1.2 60 50 50 60 nC ns V A Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73624 S-52667--Rev. A, 02-Jan-06 www.vishay.com 3 SI4559ADY Vishay Siliconix New Product N CHANNEL Transfer Characteristics 5 VGS = 10 thru 4 V 4 TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 20 18 I D - Drain Current (A) 16 14 12 10 8 6 4 2 0 0.0 3V 0 0.0 I D - Drain Current (A) 3 2 TC = 125 _C 1 25 _C -55 _C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.080 0.075 800 C - Capacitance (pF) 0.070 0.065 0.060 0.055 VGS = 10 V 0.050 200 0.045 0.040 0 2 4 6 8 10 12 14 16 18 20 0 0 Crss 10 Coss VGS = 4.5 V 1000 Capacitance rDS(on) - On-Resistance (mW) Ciss 600 400 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 4.3 A 8 rDS(on) - On-Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 0 0 3 6 9 12 15 0.6 -50 2.0 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.3 A 6 4 2 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73624 S-52667--Rev. A, 02-Jan-06 www.vishay.com 4 SI4559ADY New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage rDS(on) - Drain-to-Source On-Resistance (mW) 20 TJ = 150 _C 10 I S - Source Current (A) 0.12 0.11 0.10 0.09 0.08 0.07 ID = 4.3 A 0.06 0.05 0.04 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 Vishay Siliconix N CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 25 _C 1 0.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 3.0 2.8 20 2.6 VGS(th) (V) 2.4 2.2 2.0 1.8 5 1.6 1.4 -50 0 0.01 ID = 250 mA Power (W) 15 25 Single Pulse Power, Junction-to-Ambient 10 -25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area 100 *rDS(on) Limited 10 I D - Drain Current (A) 100 ms 1 ms 10 ms 1 0.1 TA = 25 _C Single Pulse 0.01 100 ms 1s 10 s dc 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73624 S-52667--Rev. A, 02-Jan-06 www.vishay.com 5 SI4559ADY Vishay Siliconix New Product N CHANNEL Power De-Rating 4.0 3.5 3.0 ID - Drain Current (A) 4 Power Dissipation (W) 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 6 5 3 2 1 TC - Case Temperature (_C) TC - Case Temperature (_C) Single Pulse Avalanche Capability 100 IC - Peak Avalanche Current (A) 10 TA + L @ ID BV * VDD 1 0.000001 0.00001 0.0001 0.001 TA - Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73624 S-52667--Rev. A, 02-Jan-06 SI4559ADY New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 _C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73624 S-52667--Rev. A, 02-Jan-06 www.vishay.com 7 SI4559ADY Vishay Siliconix New Product P CHANNEL Transfer Characteristics 25 VGS = 10 thru 5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 25 15 4V 10 15 10 TC = 125 _C 5 25 _C 0 5 3V 0 0 1 2 3 4 5 6 7 8 -55 _C 3 4 5 6 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.40 0.35 rDS(on) - On-Resistance (W) 0.30 0.25 0.20 0.15 0.10 200 0.05 0.00 0 5 10 15 20 25 0 0 Crss 10 20 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 800 1000 Capacitance Ciss 600 400 Coss 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 3.1 A 8 rDS(on) - On-Resistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.6 -50 2.2 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.1 A 6 4 2 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 8 Document Number: 73624 S-52667--Rev. A, 02-Jan-06 SI4559ADY New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C rDS(on) - On-Resistance (W) I S - Source Current (A) 10 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 3.1 A Vishay Siliconix P CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 1 0.0 Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 40 Power (W) 30 0.0 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Safe Operating Area, Junction-to-Case 100 IDM Limited 10 I D - Drain Current (A) Limited by rDS(on) P(t) = 0.0001 1 ID(on) Limited 0.1 TA = 25 _C Single Pulse BVDSS Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com Document Number: 73624 S-52667--Rev. A, 02-Jan-06 9 SI4559ADY Vishay Siliconix New Product P CHANNEL TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 4.0 3.5 3.0 ID - Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC - Case Temperature (_C) Power De-Rating, Junction-to-Foot 4.5 4.0 3.5 Power Dissipation (W) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 1 0.000001 IC - Peak Avalanche Current (A) 100 Single Pulse Avalanche Capability 10 TA + L @ ID BV * VDD 0.00001 0.0001 0.001 TC - Case Temperature (_C) TA - Time In Avalanche (sec) *The power dissipation Pb is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73624 S-52667--Rev. A, 02-Jan-06 SI4559ADY New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Vishay Siliconix P CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85 _C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73624. Document Number: 73624 S-52667--Rev. A, 02-Jan-06 www.vishay.com 11 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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