|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
IRF6619PbF IRF6619TRPBF DirectFET Power MOSFET Typical values (unless otherwise specified) PD - 97084 RoHS Compliant l Lead-Free (Qualified up to 260C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l VDSS 20V max VGS RDS(on) RDS(on) 20V max 1.65m@ 10V 2.2m@ 4.5V Qg tot Qgd 13nC Qgs2 3.5nC Qrr 18nC Qoss 22nC Vgs(th) 2.0V 38nC MX DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description The IRF6619PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6619PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS (Thermally limited) IAR EAR 6.0 Typical R DS (on) (m) Max. 20 20 30 24 150 240 240 See Fig. 14, 15, 17a, 17b, VGS, Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg Repetitive Avalanche Energy g e @ 10V e @ 10V fA(Package Limited) h 12 10 8 6 4 2 0 0 20 ID= 16A A mJ A mJ g 5.0 4.0 3.0 2.0 1.0 2.0 TJ = 25C TJ = 125C ID = 30A VDS = 16V VDS= 10V 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 40 60 80 100 Fig 1. Typical On-Resistance Vs. Gate Voltage QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.86mH, RG = 25, IAS = 24A, VGS =10V. Part not recommended for use above this value. www.irf.com 1 5/3/06 IRF6619PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 1.55 --- --- --- --- --- 89 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units --- 14 1.65 2.2 --- -5.8 --- --- --- --- --- 38 10.2 3.5 13.2 11.1 16.7 22 --- 21 71 25 9.3 5040 1580 780 --- --- 2.2 3.0 2.45 --- 1.0 150 100 -100 --- 57 --- --- --- --- --- --- 2.3 --- --- --- --- --- --- --- pF VGS = 0V VDS = 10V = 1.0MHz ns nC Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 30A i VGS = 4.5V, ID = 24A i VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 24A VDS = 10V V m V mV/C A nA S mV/C Reference to 25C, ID = 1mA nC VGS = 4.5V ID = 16A See Fig. 18 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V i ID = 24A Clamped Inductive Load Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current @TC=25C (Body Diode) Pulsed Source Current (Body Diode) g --- --- --- 0.8 29 18 1.0 44 27 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 240 Min. --- Typ. Max. Units --- 110 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 24A, VGS = 0V i TJ = 25C, IF = 24A di/dt = 100A/s i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF6619PbF Absolute Maximum Ratings PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG e Power Dissipation e Power Dissipation f Power Dissipation Operating Junction and Parameter Max. 2.8 1.8 89 270 -40 to + 150 Units W Peak Soldering Temperature Storage Temperature Range C Thermal Resistance RJA RJA RJA RJC RJ-PCB 100 el Junction-to-Ambient jl Junction-to-Ambient kl Junction-to-Case fl Junction-to-Ambient Linear Derating Factor Parameter Typ. --- 12.5 20 --- 1.0 0.017 Max. 45 --- --- 1.4 --- Units C/W Junction-to-PCB Mounted eA W/C 10 Thermal Response ( Z thJA ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C A 2 3 4 4 0.1 Ri (C/W) 0.6784 17.299 17.566 9.4701 i (sec) 0.00086 0.57756 8.94 106 0.01 1 Ci= i/Ri Ci i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 0.01 0.1 1 10 100 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Notes: R is measured at TJ of approximately 90C. Surface mounted on 1 in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) www.irf.com 3 IRF6619PbF 1000 TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 1 2.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 150C 1 0.1 1 10 0.1 0.1 1 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 1.5 Fig 5. Typical Output Characteristics ID = 30A ID, Drain-to-Source Current (A) Typical R DS(on) (Normalized) TJ = 150C TJ = 25C 10 VGS = 10V TJ = -40C 1.0 1 VDS = 10V 0.1 1.5 2.0 2.5 3.0 60s PULSE WIDTH 3.5 4.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 6. Typical Transfer Characteristics 8000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Fig 7. Normalized On-Resistance vs. Temperature 10 9 8 (m) TA= 25C VGS = 3.0V 6000 Coss = Cds + Cgd VGS = 3.5V VGS = 4.0V VGS = 4.5V VGS = 5.0V VGS = 10V C, Capacitance (pF) DS(on) Typical R 10 100 Ciss 4000 7 6 5 4 3 2 1 2000 Coss Crss 0 1 0 40 80 120 160 200 VDS , Drain-to-Source Voltage (V) ID, Drain Current (A) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 4 www.irf.com IRF6619PbF 1000.0 ID, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100sec ISD , Reverse Drain Current (A) 100.0 TJ = 150C TJ = 25C TJ = -40C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25C Tj = 150C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 160 140 ID , Drain Current (A) LIMITED BY PACKAGE 2.0 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (C) ID = 250A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( C ) Fig 12. Maximum Drain Current vs. Case Temperature 1000 Fig 13. Typical Threshold Voltage vs. Junction Temperature Duty Cycle = Single Pulse 100 Avalanche Current (A) 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 1 0.05 0.10 0.1 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth www.irf.com 5 IRF6619PbF 300 EAR , Avalanche Energy (mJ) Single Pulse ID = 24A 200 100 0 25 50 75 100 125 150 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 3) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Starting TJ , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature 1000 EAS, Single Pulse Avalanche Energy (mJ) 15V 800 12A 15A BOTTOM 24A TOP ID VDS L DRIVER RG D.U.T IAS tp 600 20V VGS + V - DD A 0.01 400 Fig 17a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Drain Current I AS Fig 17b. Unclamped Inductive Waveforms LD VDS L 0 + DUT 1K VCC D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% VDD - Fig 18a. Gate Charge Test Circuit Vds Vgs Id Fig 19a. Switching Time Test Circuit VDS 90% Vgs(th) 10% VGS Qgs1 Qgs2 td(on) Qgd Qgodr tr td(off) tf Fig 18b. Gate Charge Waveform Fig 19b. Switching Time Waveforms 6 www.irf.com IRF6619PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 20. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs DirectFET Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. VGS This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D S G S D D D www.irf.com 7 IRF6619PbF DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007 DirectFET Part Marking 8 www.irf.com IRF6619PbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6619TRPBF). For 1000 parts on 7" reel, order IRF6619TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX CODE MIN MIN MIN MIN MAX MAX MAX 6.9 12.992 N.C A N.C 330.0 177.77 N.C N.C B 0.75 0.795 N.C 20.2 19.06 N.C N.C N.C C 0.53 0.504 0.50 12.8 13.5 0.520 13.2 12.8 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 2.31 3.937 100.0 N.C 58.72 N.C N.C N.C F N.C N.C N.C 0.53 N.C 0.724 18.4 13.50 G 0.47 0.488 N.C 12.4 11.9 0.567 14.4 12.01 H 0.47 0.469 11.9 N.C 11.9 0.606 15.4 12.01 LOADED TAPE FEED DIRECTION CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 0.161 3.90 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.201 0.209 5.10 5.30 0.256 6.50 0.264 6.70 0.059 N.C 1.50 N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.5/06 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
Price & Availability of IRF6619TRPBF |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |