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Ordering number : ENA0657
EMH2603
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
EMH2603
Features
*
General-Purpose Switching Device Applications
* *
The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. Nch: 2.5V drive. Pch: 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit Mounted on a ceramic board (900mm20.8mm) Conditions N-channel 30 10 0.15 0.6 0.6 1.2 150 --55 to +150 P-channel -20 10 --2 --8 1.1 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=80mA 30 1 10 0.4 0.13 0.22 1.3 V A A V S Symbol Conditions Ratings min typ max Unit
Marking : FC
Continued on next page.
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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107PE TI IM TC-00000506 No. A0657-1/7
EMH2603
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--4V ID=--0.5A, VGS=-2.5V ID=--0.3A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A IS=--2A, VGS=0V --20 --1 10 --0.4 1.9 3.2 115 165 260 420 73 60 11.8 33 48 43 4.7 0.75 1.6 --0.83 --1.2 150 235 520 --1.4 Ratings min typ 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max 3.7 5.2 12.8 Unit pF pF pF ns ns ns ns nC nC nC V V A A V S m m m pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Package Dimensions
unit : mm (typ) 7045-005
Electrical Connection
8
7
6
5
0.2
0.2
0.125
8
5
1
0.5 2.0
0.2
4
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain1 7 : Drain1 8 : Drain1
1 2 3 4
1.7
2.1
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain1 7 : Drain1 8 : Drain1 SANYO : EMH8
Top view
0.05
0.75
No. A0657-2/7
EMH2603
Switching Time Test Circuit
[N-channel] [P-channel]
VIN 0V --4V VIN ID= --1A RL=10 VDD= --10V
VIN 4V 0V VIN
VDD=15V
ID=80mA RL=187.5
D
PW=10s D.C.1% Rg
VOUT
D
PW=10s D.C.1%
VOUT
G
G
P.G
EMH2603 50
EMH2603 P.G 50
S
S
--8.0V --6.0V
0.16 0.14 0.12 0.10 0.08
ID -- VDS
3.0 V
2.5
3.5V 4.0V
[Nch]
--2.0 --1.8 --1.6
ID -- VDS
--4.0V --3.0 V --2. 5V
[Pch]
0V
2.0
Drain Current, ID -- A
Drain Current, ID -- A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4
6.0
V
VGS=1.5V
0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029
--2 .
V
V
. --1
8V
--0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7
VGS= --1.5V
--0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V
0.30
ID -- VGS
Drain-to-Source Voltage, VDS -- V
--2.0 --1.8 --1.6
IT10538
[Nch]
ID -- VGS
[Pch] VDS= --10V
0.25
Ta=
--25 C
VDS=10V
C
Drain Current, ID -- A
Drain Current, ID -- A
75 C
0.20
25
--1.4 --1.2 --1.0 --0.8
0.15
75 C --2 5C
25
0.05
C
--0.4 --0.2 0 2.0 2.5 3.0 IT00030 0 --0.5
Ta =
Ta= 7
--1.0
0 0 0.5 1.0 1.5
25 C
--1.5
5C
--0.6
--25C
0.10
--2.0
--2.5 IT10539
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
No. A0657-3/7
EMH2603
10
RDS(on) -- VGS
[Nch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700
RDS(on) -- VGS
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
600
--0.5A
500
400
--1.0A ID= --0.3A
80mA ID=40mA
300
200
100 0 0 --2 --4 --6 --8 IT10540
Gate-to-Source Voltage, VGS -- V
10
IT00031
RDS(on) -- ID
Gate-to-Source Voltage, VGS -- V
500
[Nch] VGS=4V
Static Drain-to-Source On-State Resistance, RDS(on) -- m
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) --
7
400
5
Ta=75C
3
300
25C --25C
A I D= --0.3
--1.8V , V GS=
200
2
--2.5V , V GS= = --0.5A ID --4.0V , V GS= = --1.0A ID
100
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00032
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Drain Current, ID -- A
10
Ambient Temperature, Ta -- C
10
IT10541
RDS(on) -- ID
[Nch]
Forward Transfer Admittance, yfs -- S
yfs -- ID
VDS= --10V
[Pch]
VGS=2.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
7 5 3 2
5
Ta=75C 25C
3
--25C
1.0 7 5 3 2
C -25 =Ta C 75
C 25
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
0.1 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
100 7
RDS(on) -- ID
Drain Current, ID -- A
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
5 7 --10 IT10542
[Nch] VGS=1.5V
IS -- VSD
[Pch] VGS=0V
Static Drain-to-Source On-State Resistance, RDS(on) --
5
2
Source Current, IS -- A
3
25 C
--0.7
5C
7 5 3 2
--25C 25C
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00034
--0.01 --0.4
--0.5
--0.6
Ta= 7
10
Ta=75C
--25
--0.8 --0.9
C
--1.0
--1.1
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
IT10543
No. A0657-4/7
EMH2603
7
RDS(on) -- Ta
[Nch]
5 3
SW Time -- ID
[Pch] VDD= --10V VGS= --4V
Static Drain-to-Source On-State Resistance, RDS(on) --
Switching Time, SW Time -- ns
6
2 100 7 5 3 2
5
4
3
4.0V 40m S= I D= A, VG 80m I D=
G A, V
2. S=
5V
td(off) tf
2
td(on)
10 7 5
tr
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
Ambient Temperature, Ta -- C
1.0
IT00035
yfs -- ID
[Nch] VDS=10V
1000 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT10544
[Pch] f=1MHz
Forward Transfer Admittance, yfs -- S
7 5
Ciss
2
-Ta=
25C
75C
Ciss, Coss, Crss -- pF
3
3 2
25C
0.1 7 5 3 2
100 7 5 3
Coss
Crss
0.01 0.01
2 2 3 5 7 0.1 2 3 5 IT00036 0 --5 --10 --15 --20 IT10545
Drain Current, ID -- A
1.0 7 5
IS -- VSD
Drain-to-Source Voltage, VDS -- V
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0
[Nch] VGS=0V
VGS -- Qg
[Pch]
Source Current, IS -- A
3 2
0.1 7 5 3 2
0.01 0.5
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --2A
75 C 25 C --2 5C
Ta =
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Diode Forward Voltage, VSD -- V
1000 7
Total Gate Charge, Qg -- nC
2 --10 7 5
IT10546
SW Time -- ID
Switching Time, SW Time -- ns
5 3 2
[Nch] VDD=15V VGS=4V
ASO
IDP= --8A
[Pch]
td(off) tf
Drain Current, ID -- A
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
100 7 5 3 2
tr
PW10s 1m 100 s s ID= --2A 10 DC m 10 s op 0m er s ati on (T a= 25 C Operation in this area ) is limited by RDS(on).
td(on)
10 0.01
2
3
5
7
0.1
2 IT00038
--0.01 --0.01 2 3
Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit
5 7--0.1 23 5 7--1.0 23 5 7 --10 23 5
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT11989
No. A0657-5/7
EMH2603
100 7 5
Ciss, Coss, Crss -- VDS
[Nch] f=1MHz
Allowable Power Dissipation, PD -- W
1.4
PD -- Ta
[Pch]
1.2 1.1 1.0
M
Ciss, Coss, Crss -- pF
3 2
ou
nte
do
na
0.8
ce
10 7 5 3 2
ram
Ciss Coss
Crss
ic
0.6
bo
ard
(9
00
0.4
mm
2
0
.8m
0.2 0
m)
1u
nit
160
1.0 0 2 4 6 8 10 12 14 16 18 20
0
20
40
60
80
100
120
140
Drain-to-Source Voltage, VDS -- V
10 9
IT00039
Ambient Temperature, Ta -- C
IT11991
VGS -- Qg
[Nch]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=150mA
8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
1.0 7 5
IT00040
ASO
IDP=0.6A
10 m
[Nch]
PW10s
s 0 10 ms 1
Drain Current, ID -- A
3 2
s
ID=0.15A
DC
10 0m s
0.1 7 5 3 2
op er ati on
2 a= (T C) 5
Operation in this area is limited by RDS(on).
0.01 0.01
Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit
2 3 5 7 0.1 2 3 5 7 1.0 2
3
5
Drain-to-Source Voltage, VDS -- V
0.8
IT11988
PD -- Ta
[Nch]
Allowable Power Dissipation, PD -- W
0.6
M
ou
nte
do
na
ce
0.4
ram
ic
bo
ard
(9
00
0.2
mm
2
0
.8m
m)
1u
0 0 20 40 60 80 100 120 140
nit
160
Ambient Temperature, Ta -- C
IT11990
No. A0657-6/7
EMH2603
Note on usage : Since the EMH2603 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.
PS No. A0657-7/7

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