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| CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION Vds=25V RDS(ON)=8.5 m (Max.) , VGS @10V, Ids@30A RDS(ON)=13 m (Max.), VGS @4.5V, Ids@30A FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25 unless otherwise notes) Rating Drain - Source Voltage Gate -Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol VDS VGS ID IDM TA=25 TA=75 PD PD TJ / TSTG RJC 2) Value 25 20 30 260 60 23 -55 to150 1.8 50 Unit V V A A W W /W /W Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction - to -Case Thermal Resistance Junction - to Ambient Thermal Resistance (PCB mount) RJA Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2 2. 1-in 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 1 CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET ORDERING INFORMATION Part Number CMT35N03GN252 Package TO-252 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise notes) Symbol Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistancem Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Test Conditions VGS=0V, ID=-250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=-250uA VDS=15V, ID=15A VDS=25V, VGS=0V VGS=20V , VDS=0V ID=35A VDS=15V VGS=10V VDD=15V ID=1A RG=6 RL=15 VGEN=10V VGS=0V VDS=15V f=1.0MHz Min. 25 1 - Typ. 9.5 6.5 1.8 12 10 3.5 3 12 4 32 6 1180 270 145 Max. 13.0 9.0 3 1 100 25 10 65 - Units V m m V S uA nA nC nC nC ns ns ns ns pF pF pF Static BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Gate-Source Forward Leakage 3) Dynamic Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD Parameter Diode Forward Voltage Max. Diode Forward Current Test Conditions IS=20A, VGS=0V Min. Typ. 0.87 Max. 1.5 20 Units V A Is Notes: Pulse test : Pulse width <300us , duty cycle <2%. 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 2 CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL CHARACTERISTICS 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 3 CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 4 CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET PACKAGE DIMENSION TO-252 B R C E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE V 4 1 2 3 K S A U L G J H D 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 5 CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 6 |
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