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| SMD Type MOS Field Effect Power Transistors 2SJ325 Features Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in G-S Gate Protection Diode 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s; d 1%. Tch Tstg Symbol VDSS VGSS VGSS ID ID PD Rating -30 -20,+10 20 4.0 16 20 1.0 150 -55 to +150 Unit V V V A A W W 3.80 (VGS=-4V,ID=-1.6A) www.kexin.com.cn 1 SMD Type 2SJ325 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-30V,VGS=0 VGS= 16V,VDS=0 -1.0 3.0 Min MOSFET IC Typ Max -10 10 Unit A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg QGS QGD VF trr Qrr IF=4.0A,VGS=0 IF=4.0A,VGS=0,di/dt=50A/ s VGS=-10V,ID=-4.0A,VDD=-24V VGS(on)=-10V,VDD=-15V,ID=--2A RL=7.5 ,RG=10 VDS=-10V,VGS=0,f=1MHZ VDS=-10V,ID=-2.0A VGS=-10V,ID=-2.0A VGS=-4V,ID=-1.6A -1.5 4.2 0.18 0.15 800 600 250 15 65 85 60 28 3 11 0.9 65 60 -2.0 0.11 0.24 pF pF pF ns ns ns ns nC nC nC V ns nC 2 www.kexin.com.cn |
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