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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 600 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 5 Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 6 1 30 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD799 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A IC=4A; IB=0.04A 2.0 V Base-emitter saturation voltage 2.5 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=2A ; VCE=2V 600 hFE-2 DC current gain IC=4A ; VCE=2V 100 VECF COB TOR NDU ICO E SEM ANG INCH Diode forward voltage IE=4A; IB=0 Collector output capacitance f=1MHz;VCB=50V 35 3.0 V pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD799 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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