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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(H)IS package High voltage Low saturation voltage High speed Bult-in damper diode APPLICATIONS High speed switching applications Horizontal deflection output for medium resolution display,color TV PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5280 Maximum absolute ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 1500 600 5 8 16 4 TC=25ae Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3P(H)IS) and symbol UNIT V V V A A A W ae ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-base breakdown voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=6A;IB=1.5 A IC=6A;IB=1.5 A IE=400mA;IC=0 VEB=5V; IC=0 VCB=1500V; IE=0 IC=1 A ; VCE=5V IC=6A ; VCE=5V IE=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 10 4 2 5 72 1.0 MIN 2SC5280 SYMBOL VCEsat VBEsat V(BR)EBO IEBO ICBO hFE-1 hFE-2 fT COB VF TYP. MAX 5 1.5 UNIT V V V 250 1 35 8.5 mA mA MHz pF V Switching times tstg tf NDU ICO E SEM ANG INCH Diode forward voltage IF=6A Storage time Fall time ICP=6A;IB1(end)=1.2A fH=31.5kHz TOR 115 1.4 1.8 4 0.2 6 0.5 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5280 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5280 TOR NDU ICO E SEM ANG INCH 4 |
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