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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= 3A *Low Collector Saturation Voltage: VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 60 60 5 10 0.1 90 200 -55~+200 UNIT V V V A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MJ1000 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 40mA B 4.0 V VBE(on) Base-Emitter On Voltage IC= 3A, VCE= 3V VCE= 60V; RBE=1k VCE= 60V; RBE=1k; TC=150 VCE= 30V; IB= 0 B 2.5 1.0 5.0 0.5 V ICER Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 3A, VCE= 3V 1000 hFE-2 DC Current Gain IC= 4A, VCE= 3V 750 isc Websitewww.iscsemi.cn |
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