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| SMD Type N-Channel UltraFET Trench MOSFET KDS2572 IC IC Features RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 ) *1 Drain Current Continuous (TC = 100 ) *1 Power dissipation Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Case at 10 seconds *2 Thermal Resistance Junction to Case at steady state *2 *1 VGS = 10V, RqJA = 50 /W *2 R JA is Symbol VDSS VGS ID Rating 150 20 4.9 3.1 Unit V V A A W mW/ PD TJ, TSTG R R R JC JA JA 2.5 20 -55 to 150 25 50 85 /W /W /W measured with 1.0in2 copper on FR-4 board www.kexin.com.cn 1 SMD Type KDS2572 Electrical Characteristics Ta = 25 Parameter Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Drain to Source On Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Gate Charge Threshold to Plateau Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Symbol BVDSS IDSS IGSS VGS(TH) rDS(ON) rDS(ON) CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgd Qgs2 tON td(ON) tr td(OFF) tf tOFF VSD trr QRR ISD = 4.9A ISD = 3.1A ISD = 4.9A, dISD/dt =100A/ ISD = 4.9, dISD/dt =100A/ s s VDD = 75V, ID = 4.9A,VGS = 10V, RG = 10 14 4 44 22 100 1.25 1.0 72 158 VDD = 75V,ID = 4.9A,Ig = 1.0mA VGS=0V to 10V,VDD=75V,ID=4.9A,Ig=1.0mA VGS=0V to 2V,VDD=75V,ID=4.9A,Ig=1.0mA VDS = 25V, VGS = 0V,f = 1MHz Testconditons ID = 250mA, VGS = 0V VDS = 120V,VGS = 0V VDS = 120V,VGS = 0V ,TC = 150 VGS = 20V 2 100 4 0.040 0.047 0.044 0.053 2050 220 48 29 4 8 6 4 27 38 6 Min 150 1 Typ Max IC IC Unit V A nA V VGS = VDS, ID = 250mA ID = 4.9A, VGS = 10V ID = 4.9A, VGS = 6V pF pF pF nC nC nC nC nC ns ns ns ns ns ns V V ns nC 2 www.kexin.com.cn |
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