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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *High Collector Current-IC= 1.5A *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) *High Switching Speed APPLICATIONS *Designed for use in fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B BUX99 PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Emitter Current-Continuous Emitter Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 730 300 12 1.5 3 0.75 1.5 2.25 4.5 28 150 -65~150 UNIT V V V A A A A A A W IBM IE IEM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.5 100 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES ICEX IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 0.1A ; IB= 0; L= 25mH IC= 0.2A; IB= 20mA IC= 0.2A; IB= 20mA VCE= 400V;VBE= 0 VCE= 730V;VBE= -1.5V VCE= 730V;VBE= -1.5V;TJ=100 VEB= 12V; IC= 0 IC= 10mA ; VCE= 2V IC= 50mA ; VCE= 5V IC= 0.1A ; VCE= 10V IE= 0; VCB= 10V,ftest= 1MHz 10 16 4 12 MIN 300 TYP. BUX99 MAX UNIT V 2 1 5 50 250 1 V V A A mA 42 MHz pF Switching times tstg tf Storage Time IC= 1A ,VCC= 250V, IB1= 20mA; IB2= -40mA Fall Time 0.8 2 s s isc Websitewww.iscsemi.cn 2 |
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