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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUW12 BUW12A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER BUW12 Open emitter BUW12A VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage IN Emitter-base voltage Collector current ANG CH BUW12 BUW12A SEM E Open base DUC ICON CONDITIONS VALUE 850 TOR 1000 400 450 9 8 20 4 UNIT V V V A A A W ae ae Open collector Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 125 150 -65~175 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.2 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUW12 IC=0.1A ; IB=0; L=25mH BUW12A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage BUW12 BUW12A IEBO hFE Emitter cut-off current DC current gain IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=850V; VBE=0 CONDITIONS BUW12 BUW12A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 1.5 1.5 V V ICES Collector cut-off current 1.0 VCE=1000V; VBE=0 VEB=9V; IC=0 IC=1A ; VCE=5V 15 10 50 mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time HAN INC SEM GE IC=6A ;IB1=-IB2=1.2A VCC=240V OND IC TOR UC 1.0 |I 4.0 0.8 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW12 BUW12A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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