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| 2SK3598-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 100 70 29 116 30 29 155.8 20 5 2.02 105 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C *1 L=222H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch < 150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 100V *5 VGS=-30V = = = = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 VCC=50V ID=20A VGS=10V L=222H Tch=25C IF=20A VGS=0V Tch=25C IF=20A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 47 12 730 190 12 12 3.8 23 8.5 22 9 6 1.10 65 0.17 Min. 100 3.0 Typ. Max. 5.0 25 250 100 62 1095 285 18 18 6 35 13 33 13.5 9 1.65 Units V V A nA m S pF 6 ns nC 29 A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.191 62.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3598-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 120 400 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=12A 350 100 300 80 250 IAS=17A EAS [mJ] PD [W] 60 200 IAS=29A 150 40 100 20 50 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 80 20V 10V 60 10 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 40 8V 7.5V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 10 12 7.0V 20 6.5V 6.0V VGS=5.5V 0 0 2 4 6 8 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.18 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 0.15 6.5V 7.0V 7.5V 8V RDS(on) [ ] 10 0.12 gfs [S] 0.09 10V 0.06 20V 0.03 1 0.1 0.1 1 10 100 0.00 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3598-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V 150 7.0 6.5 125 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A max. RDS(on) [ m ] 100 VGS(th) [V] 4.5 4.0 3.5 3.0 min. 75 max. 50 2.5 typ. 2.0 1.5 25 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A, Tch=25C 10 14 12 10 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Ciss VGS [V] 8 6 Vcc= 50V C [nF] Coss 10 4 2 -1 Crss 0 0 10 20 30 40 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 10 10 2 IF [A] t [ns] td(off) td(on) 1 10 1 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3598-01 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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