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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-220) and symbol Emitter DESCRIPTION Maximum absolute ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg NDU ICO E SEM ANG INCH PARAMETER CONDITIONS Collector-base voltage Open emitter 2SD743 Collector-emitter voltage Open base 2SD743A Emitter-base voltage Open collector Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae TOR VALUE 100 80 100 5 4 6 1 40 150 -50~150 UNIT V V V A A A W ae ae THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD743 V(BR)CEO Collector-emitter breakdown voltage 2SD743A V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=1.0mA; IE=0 IE=1.0mA; IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=80V; IE=0 VEB=3V; IC=0 IC=10mA; IB=0 CONDITIONS 2SD743 2SD743A SYMBOL MIN 80 TYP. MAX UNIT V 100 100 5 2.0 2.0 10 10 |I |I V V V V A A hFE-2 Classifications S 40-80 R 60-120 TOR NDU ICO E SEM ANG INCH IC=20mA ; VCE=5V IC=0.5A ; VCE=5V 20 40 Transition frequency IC=0.1A ; VCE=5V;f=1.0MHz 10 200 MHz Q 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD743 2SD743A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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