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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD478 DESCRIPTION With TO-220C package Complement to type 2SB568 APPLICATIONS Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 6 Emitter-base voltage Open collector Collector current Collector current-peak Ta=25ae 2 5 1.8 UNIT V V V A A PC Collector power dissipation TC=25ae 30 150 -45~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; RBE= IE=5mA; IC=0 IC=0.5 A;IB=50m A IC=50mA ; VCE=4V VCB=120V; IE=0 VEB=4V; IC=0 IC=50mA ; VCE=4V IC=0.5A ; VCE=10V 60 60 MIN 150 6 TYP. 2SD478 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 MAX UNIT V V 3.0 1.0 1.0 1.0 320 |I |I V V A A hFE-1 classifications B 60-120 C TOR NDU ICO E SEM ANG INCH D 100-200 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD478 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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