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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD386 2SD386A
DESCRIPTION With TO-220C package High voltage :VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO PARAMETER
VCEO
VEBO
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 200 Collector-base voltage Open emitter 2SD386 120 Collector-emitter voltage Open base 2SD386A 150 6 Emitter-base voltage Open collector 2SD386 3 Collector current 2SD386A 2 10 TC=25ae 25 Collector current-Peak
UNIT V
V
V
IC
A
ICM
A
PC
Collector dissipation Ta=25ae 1.75 150 -40~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SD386 IC=25mA; IB=0 2SD386A 2SD386 IC=1A; IB=0.1A 2SD386A VBEsat ICBO IEBO hFE fT Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=1A; IB=0.1A VCB=180V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.5A ; VCE=5V CONDITIONS
2SD386 2SD386A
SYMBOL
MIN 120
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 150 1.0 V 1.5 1.8 1.0 5.0 40 8 320 V mA mA
VCEsat
Collector-emitter saturation voltage
hFE Classifications C 40-80 D
NDU ICO E SEM ANG INCH
E F 60-120 100-200 160-320
TOR
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD386 2SD386A
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm)
3


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