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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1894 DESCRIPTION With TO-3PFa package High DC current gain Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification Optimum for 60W high-fidelity output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 5 7 12 TC=25ae 70 Emitter-base voltage Collector current Collector current-peak Open collector UNIT V V V A A PC Collector power dissipation 3 W Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=6A ;IB=6mA IC=6A ;IB=6mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 20 MIN 140 TYP. 2SD1894 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT MAX UNIT V 2.5 3.0 100 100 100 |I |I |I V V A A A 30000 Switching times ton ts tf NDU ICO E SEM ANG INCH Turn-on time Storage time IC=6A; VCC=50V IB1=-IB2=6mA Fall time TOR MHz 2.5 5.0 2.5 |I |I |I s s s hFE-2 Classifications Q 5000-15000 P 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1894 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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