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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION With TO-220F package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB PC Tj Tstg TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 900 2SC4517 Collector-base voltage Open emitter 2SC4517A 1000 550 7 Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 3 6 1.5 30 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.25A ; VCE=12V 2SC4517 2SC4517A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT MIN 550 TYP. MAX UNIT V 0.5 1.2 100 100 10 35 6 30 |I |I V V A A pF MHz Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.7 IC=1.0A IB1=0.15A IB2=-0.45A VCC=250V ,RL=250| 4.0 Fall time 0.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4517 2SC4517A TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A TOR NDU ICO E SEM ANG INCH 4 |
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