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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4511 DESCRIPTION With TO-220F package Complement to type 2SA1725 APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 120 80 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Base current Collector dissipation Junction temperature Storage temperature TC=25ae 3 30 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12V 50 110 20 MIN 80 TYP. 2SC4511 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT MAX UNIT V 0.5 10 10 180 |I |I V A A pF MHz Switching times ton ts tf hFE Classifications O 50-100 P NDU ICO E SEM ANG INCH Turn-on time Storage time IC=3.0A IB1=-IB2=0.3A VCC=30V ,RL=10| Fall time 0.16 2.60 TOR |I |I s |I s s 0.34 Y 70-140 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4511 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4511 TOR NDU ICO E SEM ANG INCH 4 |
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