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SMD Type
Silicon PNP Epitaxial Planar Type 2SB929
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -60 -5 -3 -5 1.3 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff curent Emitter-base cutoff current Collector-emitter voltage Forward current transfer ratio Base to emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICES ICEO IEBO VCEO hFE VBE Testconditons VCE = -60 V,VBE = 0 VCE = -30 V,IB = 0 VEB = -5 V, IC = 0 IC = -30 mA, IB = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3A VCE = -4 V,IC = -3 A -60 70 10 -1.8 -1.2 30 0.5 IC = -1 A,IB1 = -0.1 A,IB2 = 0.1 A 1.2 0.3 V V MHz is is is 250 Min Typ Max -200 -300 -1 Unit iA iA mA V
VCE(sat) IC = -3 A, IB = -0.375 A fT ton tstg tf VCE = -10 V, IC = -0.5 A , f = 10 MHz
hFE Classification
Rank hFE Q 70 150 P 120 250
3.80
Low collector-emitter saturation voltage VCE(sat).
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