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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA650 DESCRIPTION *With TO-3 package *Wide area of safe operation APPLICATIONS *For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -6 -10 100 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA650 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V 30 150 COB Collector output capacitance IE=0; VCB=-10V;f=1MHz 500 pF fT Transition frequency IC=-1A ; VCE=-5V 10 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA650 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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