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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1093
DESCRIPTION *With TO-3P(I) package *Complement to type 2SC2563 *High transition frequency APPLICATIONS *Audio frequency power amplifier applicatios
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Fig.1 simplified outline (TO-3P(I)) and symbol Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -120 -120 -5 -8 -0.8 80 150 -55~150
UNIT V V V A A W
PT Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-10V IE=0 ; VCB=-10V ;f=1MHz 55 30 MIN -120
2SA1093
TYP.
MAX
UNIT V
-1.0 -1.5
-2.0 -2.5 -50 -50 240
V V A A
90 150
MHz pF
hFE-1 Classifications R 55-110 O 80-160 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1093
Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)
3


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