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E007264 APSS0 NTE4967 B80N06 2N6772 16X15 AOD408 1N4117
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  Datasheet File OCR Text:
 SMD Type
Silicon PIN Diode BA597
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion
0.475
+0.1 2.6-0.1
1.0max
0.375
A bsolute M axim um R atings T a = 25
P aram eter R everse voltage F orw ard current T otal pow er dissipation T S Junction tem perature S torage tem perature range N ote: 1.P ackage m ounted on alum inum 15 m m 16.7 m m 0.7 m m . 40
1)
S ym bol VR IF T to t Tj T stg
V alue 50 100 250 150 -55 to + 150
U nit V mA mW
Electrical Characteristics Ta = 25
Parameter Reverse current Forward voltage Diode capacitance Symbol IR VF CT Conditions VR =30 V IF = 100 mA VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz Forward resistance Charge carrier lifetime rf
L
Min
Typ
Max 20
+0.05 0.1-0.02
Unit nA V pF
0.9 0.52 0.27 22 4.2 2.5
IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, IR = 3 mA
Marking
Marking yellow R
+0.1 1.3-0.1
Features
+0.05 0.3-0.05
+0.05 0.85-0.05
S
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