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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION With TO-126 package Complement to type 2SA743/743A APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector- emitter voltage VEBO IC Emitter-base voltage Collector current HAN INC SEM GE 2SC1212A 2SC1212 2SC1212A 2SC1212 Open emitter OND IC CONDITIONS TOR UC VALUE 50 80 50 80 UNIT V Open base V Open collector 4 1 V A Ta=25ae PD Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 0.75 W 8 150 -55 +150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC1212 V(BR)CEO Collector-emitter breakdown voltage 2SC1212A 2SC1212 V(BR)CBO Collector-base breakdown voltage 2SC1212A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VCE=4V VCB=50V; IE=0 IC=50mA ; VCE=4V IC=1A ; VCE=4V IC=1mA ;IE=0 IC=10mA ;RBE= CONDITIONS 2SC1212 2SC1212A SYMBOL MIN 50 TYP. MAX UNIT V 80 50 V 80 4 1.5 1.0 5 60 20 |I V V V A ANG CH C Transition frequency hFE-1 Classifications B 60-120 IN SEM E IC=30mA ; VCE=4V OND IC TOR UC 200 160 MHz 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1212 2SC1212A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A 4 |
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