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| SMD Type Silicon PNP Epitaxial Planar Type 2SB1220 Transistors Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -150 -150 -5 -100 -50 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Noixe voltage Symbol VCEO VEBO ICBO hFE Testconditons IC = -100 iA, IB = 0 IE = -10 iA, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, IC = -10 mA 130 Min -150 -5 -1 450 -1 200 4 150 V MHz pF mV Typ Max Unit V V iA VCE(sat) IC = -30 mA, IB = -3 mA fT Cob NV VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB, Rg = 100KU, Function = FLAT hFE Classification Marking Rank hFE R 130 220 I S 185 330 T 260 450 www.kexin.com.cn 1 |
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