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SMD Type Medium Power Amplifier 2SA1979UF Transistors IC Features Large collector current. Suitable for low-Voltage operation because of its low saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -500 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Testconditons IC=-100iA, IE=0 IC=-1mA, IB=0 IE=-10iA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA 70 Min -40 -32 -5 -0.1 -0.1 240 -0.25 200 7.5 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC=-100mA, IB=-10mA fT Cob VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz hFE Classification Marking Rank hFE O 70 140 A Y 120 240 www.kexin.com.cn 1 |
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