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STN3NF06L
N-channel 60 V, 0.07 4 A, SOT-223 , STripFETTM II Power MOSFET
Features
Type STN3NF06L

VDSS (@Tjmax) 60 V
RDS(on) max < 0.1
ID 4A
2
Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested Low threshold drive
1
SOT-223
2
3
Application
Switching applications Figure 1. Internal schematic diagram
Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Table 1.
Device summary
Marking 3NF06L Package SOT-223 Packaging Tape and reel
Order code STN3NF06L
June 2008
Rev 8
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www.st.com 12
Contents
STN3NF06L
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STN3NF06L
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID(1) ID IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 60 16 4 2.9 16 3.3 0.026 10 200 -55 to 150 Unit V V A A A W W/C V/ns mJ C
PTOT dv/dt (3) EAS
(4)
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature
TJ Tstg
1. Current limited by the package 2. Pulse width limited by safe operating area 3. 4. ISD 3 A, di/dt 150 A/s, VDD V(BR)DSS, TJ TJMAX Starting Tj = 25 C, ID = 4 A, VDD = 30 V
Table 3.
Symbol Rthj-pcb Rthj-pcb Tl(3)
Thermal data
Parameter Thermal resistance junction-PCB(1) max Thermal resistance junction-PCB(2) max Value 38 100 260 Unit C/W C/W C
Maximum lead temperature for soldering purpose typ
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 sec. 2. When mounted on minimum recommended footprint 3. for 10 sec. 1.6 mm from case
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Electrical characteristics
STN3NF06L
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 16 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 1.5 A VGS= 5 V, ID= 1.5 A 1 0.07 0.085 Min. 60 1 10
100
Typ.
Max.
Unit V A A nA V
2.8 0.10 0.12
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS= 15 V, ID=1.5 A Min. Typ. 3 340 63 30 7 1.5 2.8 9 Max. Unit S pF pF pF nC nC nC
VDS =25 V, f=1 MHz, VGS=0
VDD=48 V, ID = 3 A VGS =5 V (see Figure 15)
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time rise time Test conditions VDD=30 V, ID=1.5 A, RG=4.7 , VGS=5 V (see Figure 14) VDD=30 V, ID=1.5 A, RG=4.7 , VGS=5 V (see Figure 14) Min. Typ. 9 25 20 10 Max. Unit ns ns
Turn-off delay time fall time
ns ns
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STN3NF06L
Electrical characteristics
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4 A, VGS=0 ISD= 4 A, di/dt = 100 A/s, VDD=25 V, Tj=150 C (see Figure 16) 50 88 3.5 Test conditions Min. Typ. Max 4 16 1.5 Unit A A V ns nC A
VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STN3NF06L
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STN3NF06L Figure 8. Gate charge vs. gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized breakdown voltage vs. temperature
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Test circuit
STN3NF06L
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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STN3NF06L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STN3NF06L
SOT-223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
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STN3NF06L
Revision history
5
Revision history
Table 8.
Date 21-Jun-2004 04-Oct-2006 01-Feb-2007 12-Jun-2008
Document revision history
Revision 5 6 7 8 Complete version. New template, no content change. Typo mistake on Table 2. Corrected marking on Table 1 Changes
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STN3NF06L
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