 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDJ129P November 2007 FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description This P-Channel -2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications. tm Features * -4.2 A, -20 V. RDS(ON) = 70 m @ VGS = -4.5 V RDS(ON) = 120 m @ VGS = -2.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON) * Compact industry standard SC75-6 surface mount package * RoHS Compliant Applications * Battery management * Load switch S S G 4 5 Bottom Drain 3 2 1 SC75-6 FLMP S S S 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 12 (Note 1a) Units V V A W C -4.2 -16 1.6 -55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 77 C/W Package Marking and Ordering Information Device Marking .A Device FDJ129P Reel Size 7'' Tape width 8mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDJ129P Rev G (W) FDJ129P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -20 Typ Max Units V Off Characteristics ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V, VDS = 0 V ID = -250 A -0.6 -1.1 3 54 91 72 -8 11 70 120 100 -18 -1 100 -100 mV/C A nA nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, -1.5 V mV/C m A S ID = -250 A,Referenced to 25C VGS = -4.5 V, ID = -4.2 A VGS = -2.5 V, ID = -3.3 A VGS = -4.5 V, ID = -4.2,TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4.2 A Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, V GS = 0 V, f = 1.0 MHz 585 780 pF 124 170 pF 61 95 pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 10 9 17 10 20 18 30 20 6 ns ns ns ns nC nC nC VDS = -10 V, ID = -4.2 A, VGS = -4.5 V 4 1.1 1.2 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forwar Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -1.5 A (Note 2) -0.7 16 13 -1.2 V nS nC IF = -4.2 A, diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 77C/W when mounted on a 1in2 pad of 2 oz copper. b) 110C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDJ129P Rev G (W) FDJ129P Typical Characteristics 16 -3.0V 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=-4.5V -3.5V VGS=-2.5V -ID, DRAIN CURRENT (A) 1.6 12 -2.5V 8 1.4 -3.0V -3.5V -4.0V -4.5V 1.2 4 -2.0V 1 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 4 8 -ID, DRAIN CURRENT (A) 12 16 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -4.2A VGS = -4.5V ID = -2.1A 0.18 0.14 TA = 125 C 0.1 o o TA = 25 C 0.06 0.02 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 12 VDS = -5V -ID, DRAIN CURRENT (A) 9 25 C 125 C 6 o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) TA = -55 C o VGS = 0V 10 1 0.1 0.01 0.001 TA = 125 C 25 C -55 C o o o 3 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ129P Rev G (W) FDJ129P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 800 ID = -4.2A VDS = -5V -10V CISS f = 1 MHz VGS = 0 V 4 3 CAPACITANCE (pF) -15V 600 400 2 COSS 1 200 CRSS 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1 100s 1ms 10ms 100ms 1s 10s DC 8 SINGLE PULSE RJA = 110C/W TA = 25C 6 4 0.1 VGS = -4.5V SINGLE PULSE RJA = 110oC/W TA = 25oC 2 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 110 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 o 0. 0.1 0.1 0.0 5 0.0 0.01 SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDJ129P Rev G (W) FDJ129P Dimensional Outline and Pad Layout FDJ129P Rev G (W) TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 No Identification Needed Full Production Obsolete Not In Production |
Price & Availability of FDJ129P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |