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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) *High Switching Speed APPLICATIONS *Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 2.5 A 25 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat) -2 VBE(sat) -1 VBE(sat) -2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 3A ; IB= 0.3A, L= 1mH IC= 3A; IB= 0.15A B 2SC3691 MIN 60 TYP. MAX UNIT V 0.3 0.5 1.2 1.5 10 10 1.0 10 100 100 60 150 70 200 400 V V V V A A mA A IC= 4A; IB= 0.2A B IC= 3A; IB= 0.15A B IC= 4A; IB= 0.2A B VCB= 60V; IE= 0 VCE= 60V; VBE= -1.5V Ta=125 VEB= 5V; IC= 0 IC= 0.5A ; VCE= 2V IC= 1A ; VCE= 2V IC= 3A ; VCE= 2V IC= 0.5A ; VCE= 10V IE=0 ; VCB= 10V;ftest= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A ; IB1= -IB2= 0.15A RL= 17;VCC50V 0.3 1.5 0.3 s s s hFE-2 classifications M 100-200 L 150-300 K 200-400 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3691 isc Websitewww.iscsemi.cn 3 |
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