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CY25BAJ-8F
Nch IGBT for Strobe Flash
REJ03G0285-0200 Rev.2.00 May 23, 2005
Features
* Small surface mount package (TSSOP-8) Terminal Pb free: PTSP0008JA-A (8P2J-A) Complete Pb free: PTSP0008JB-B (TTP-8DV) * VDSS : 400 V * ICM : 150 A * Drive voltage : 4 V
Outline
TSSOP-8
5 8 4 1
4
3
2
1 1,2,3,4 : Collector 5,6,7 : Emitter 8 : Gate
5
6
7
8
Applications
Strobe flash for cameras
Maximum Ratings
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 6 8 150 - 40 to +150 - 40 to +150 Unit V V V A C C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 F (see performance curve)
Rev.2.00,
May 23,2005,
page 1 of 3
CY25BAJ-8F
Electrical Characteristics
(Tj = 25C)
Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Min. 450 -- -- 0.5 -- Typ. -- -- -- 0.7 4.0 Max. -- 10 10 1.5 6.0 Unit V A A V V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = 6 V, VCE = 0 V VCE = 10 V, IC = 1 mA VCE = 4 V, IC = 150 A
Performance Curves
Maximum Collector Current vs. Gate-Emitter Voltage
200
Pulse Collector Current ICM (A)
Tc = 70C CM = 400 F RG = 30
150
100
50
0
0
2
4
6
8
Gate-Emitter Voltage VGE (V)
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 , it is satisfied.) 3. The operation life should be endured 5,000 shots under the charge current (IXe 150 A : full luminescence condition) of main capacitor (CM = 400 F) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example CY25BAJ-8F-T13
Surface-mounted type Taping 3000 Type name - T +Direction (1 or 2) +3 Note: Please confirm the specification about the shipping in detail.
Rev.2.00,
May 23,2005,
page 2 of 3
CY25BAJ-8F
Package Dimensions
JEITA Package Code P-TSSOP8-4.4x3-0.65 RENESAS Code PTSP0008JA-A Package Name 8P2J-A MASS[Typ.] 0.04g
8
5
*1
HE
E
F
A2 1 4 Index mark
A1
NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
c
*2 D
Reference Symbol
Dimension in Millimeters Min 2.9 4.3 Nom 3.0 4.4 1.0 1.2 0 0.2 0.14 0 0.1 0.25 0.15 0.2 0.32 0.2 8 6.4 0.65 0.13 0.10 0.3 0.5 0.7 6.6 Max 3.1 4.5
D
A
E A2
e
y *3 bp
L
A A1 x Detail F bp c
HE e x y L
6.2
JEITA Package Code P-TSSOP8-4.4 x 3-0.65
RENESAS Code PTSP0008JB-B
Package Name TTP-8DV
MASS[Typ.] 0.034g
*1 D
8
5
bp
Index mark
*2 E
HE
F
1
Z
4
*3 b p
Terminal cross section
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
xM
(Ni/Pd/Au plating)
e
c
Reference Symbol
Dimension in Millimeters Min Nom 3.00 4.40 Max 3.30
L1
D E A2 A1 A 0.03
0.07
0.10 1.10
A
bp b1
0.15
0.20
0.25
A1
c
0.10
0.15
0.20
L
c1 0 HE 6.20 6.40 0.65 0.13 0.10 0.805 0.40 0.50 1.0 0.60 8 6.60
y
Detail F
e x y Z L L1
Rev.2.00,
May 23,2005,
page 3 of 3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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