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2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004
Features
* Low on-resistance RDS = 40 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
D 4 4
G 1 1 S 2 3
1. Gate 2. Drain 3. Source 4. Drain
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10ms, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP
Note3
Ratings 150 20 30 120 30 30 67 100 150 -55 to +150
Unit V V A A A A mJ W C C
Pch
EARNote3 Note2 Tch Tstg
Rev.3.00 Sep. 30, 2004 page 1 of 8
2SK3210(L), 2SK3210(S)
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 20 -- -- 1.0 -- -- 18 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 40 45 30 2600 820 350 25 180 600 280 0.91 110 Max -- -- 10 10 2.5 45 63 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 50 A/s VGS = 10 V, ID= 15 A RL = 2 Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4 VNote4 ID = 15 A, VDS = 10 VNote4 VDS = 10 V, VGS = 0 f = 1MHz
Rev.3.00 Sep. 30, 2004 page 2 of 8
2SK3210(L), 2SK3210(S)
Main Characteristics
Power vs. Temperature Derating 160
Pch (W)
500 300
Maximum Safe Operation Area
10 s 100 s
PW
120
ID (A)
100 30 10 3 1
D
=
Channel Dissipation
C
Drain Current
O
10
1 m s
1s ho m s(
80
Tc
pe
=
ra
40
Operation in this area is 0.3 limited by RDS(on)
0.1 Ta = 25C 0.05 0.1 0.3 1 3
25 n C )
tio
t)
0
50
100
150 Tc (C)
200
10
30
100 300 1000
Case Temperature
Drain to Source Voltage
VDS (V)
Typical Output Characteristics 50 10 V
ID (A)
Typical Transfer Characteristics 50 VDS = 10 V Pulse Test
ID (A)
5V 4V
Pulse Test 40
40
30
Drain Current
20
Drain Current
3V
30
75C 25C
20 Tc = -25C 10
10
VGS = 2.5 V
0
2 4 6 Drain to Source Voltage
8 10 VDS (V)
0
1 2 3 Gate to Source Voltage
4 5 VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Voltage VDS(on) (V)
Pulse Test
1.6
Drain to Source On State Resistance RDS(on) (m)
2.0
Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 200 100 50 20 10 1 2 5 10 20 ID (A) 50 Drain Current 100 VGS = 4 V 10 V
1.2 ID = 20 A 10 A 5A 0 4 8 12 16 VGS (V) 20
0.8
0.4
Gate to Source Voltage
Rev.3.00 Sep. 30, 2004 page 3 of 8
2SK3210(L), 2SK3210(S)
Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source On State Resistance RDS(on) (m)
100 30 10 3 1 0.3 0.1
0.1 0.2 0.5 1 2 5
Tc = -25C 75C 25C
150 ID = 20 A 5, 10 A VGS = 4 V 50 20 A 0 -40 10 V 0 40 80 Tc 120 (C) 160 5, 10 A
100
VDS = 10 V Pulse Test
10 20 50 100
Case Temperature
Drain Current
ID (A)
1000
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse Recovery Time di / dt = 50 A / s VGS = 0, Ta = 25C
10000 3000
Capacitance C (pF)
Typical Capacitance vs. Drain to Source Voltage Ciss
500
200 100 50 20 10 0.1
1000 Coss 300 100 30 10 Crss
VGS = 0 f = 1 MHz 0 10 20
0.3
1
3
10
30 IDR (A)
100
30
40
50
Reverse Drain Current
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics 500
VDS (V)
VGS 400 VDD = 100 V 50 V 25 V 16
VGS (V)
ID = 30A
20
5000 2000
Switching Time t (ns)
Switching Characteristics VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % td(off) tf
1000 500 200 100 50
Drain to Source Voltage
300
12
200 VDS 100 VDD = 100 V 50 V 25 V 40 80 120 160
8
Gate to Source Voltage
tr td(on)
4 0 200
20 10 0.1 0.2 0.5 1 2 5 10 20 ID (A) 50
0
Gate Charge
Qg (nc)
Drain Current
Rev.3.00 Sep. 30, 2004 page 4 of 8
2SK3210(L), 2SK3210(S)
Reverse Drain Current vs. Source to Drain Voltage Pulse Test
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
50
Reverse Drain Current IDR (A)
100 IAP = 30 A VDD = 50 V duty < 0.1 % Rg > 50
40
80
30 VGS = 10 V 20
60
40
10 5V 0 0.4 0.8 0, -5 V 1.2 1.6 VSD (V) 2.0
20 0 25
50
75
100
125
150
Source to Drain Voltage
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) x ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m 100 m Pulse Width PW (s)
1
10
Avalanche Test Circuit EAR =
Avalanche Waveform VDSS 1 x L x IAP2 x VDSS - V DD 2
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.3.00 Sep. 30, 2004 page 5 of 8
2SK3210(L), 2SK3210(S)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform
90%
Rev.3.00 Sep. 30, 2004 page 6 of 8
2SK3210(L), 2SK3210(S)
Package Dimensions
* 2SK3210(L)
As of January, 2003
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Code JEDEC JEITA Mass (reference value)
LDPAK (L) -- -- 1.40 g
* 2SK3210(S)
As of January, 2003
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
0.3 10.0 + 0.5 -
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2
0.3 3.0 + 0.5 -
1.3 0.2 2.54 0.5
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Package Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(1) -- -- 1.30 g
Rev.3.00 Sep. 30, 2004 page 7 of 8
1.7
1.3 0.15
7.8 6.6
2SK3210(L), 2SK3210(S)
Ordering Information
Part Name Quantity Shipping Container 2SK3210L 50 pcs. Loose packing 2SK3210STL 1000 pcs. Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Sep. 30, 2004 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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