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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features * 48A, 500V, RDS(on) = 0.105 @VGS = 10 V * Low gate charge ( typical 105 nC) * Low Crss ( typical 45 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability UniFET October 2008 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GD S TO-247 FDH Series TO-3P G DS FDA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FDH50N50_F133/FDA50N50 500 48 30.8 192 20 1868 48 62.5 4.5 625 5 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.2 -40 Unit C/W C/W C/W (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 Rev. A FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDH50N50_F133 FDA50N50 Device FDH50N50_F133 FDA50N50 Package TO-247 TO-3P TC = 25C unless otherwise noted Reel Size - Tape Width - Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 24A VDS = 40V, ID = 48A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 -----3.0 ----------(Note 4, 5) Typ. -0.5 -----0.089 20 4979 760 50 161 342 105 360 225 230 105 33 45 Max Units --25 250 100 -100 5.0 0.105 -6460 1000 65 --220 730 460 470 137 --V V/C A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics VDS = 400V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 250V, ID = 48A RG = 25 Switching Characteristics ----- VDS = 400V, ID = 48A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 48A VGS = 0V, IS = 48A dIF/dt =100A/s (Note 4) ------ ---580 10 48 192 1.4 --- A A V ns C 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 48A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDH50N50_F133 / FDA50N50 Rev. A 2 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 100 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID , Drain Current [A] 10 1 10 150 C 25 C -55 C Notes : 1. VDS = 40V 2. 250s Pulse Test o o o 10 0 1 Notes : 1. 250s Pulse Test o 2. TC = 25 C 10 -1 10 -1 10 0 10 1 0.1 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 160 IDR , Reverse Drain Current [A] Drain-Source On-Resistance 0.3 120 RDS(ON) [], VGS = 10V 0.2 80 0.1 VGS = 20V 150 C 40 25 C Notes : 1. VGS = 0V 2. 250s Pulse Test o o Note : TJ = 25 C o 0.0 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 12,000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] 10,000 10 VDS = 250V VDS = 400V Capacitance [pF] 8,000 8 6,000 Ciss Coss 6 4,000 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2,000 2 Note : ID = 48A Crss 0 -1 10 10 0 10 1 10 2 0 0 20 40 60 80 100 120 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDH50N50_F133 / FDA50N50 Rev. A 3 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.0 RDS(ON), (Normalized) 1.1 1.5 1.0 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 10 V 2. ID = 24 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 3 Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 40 ID, Drain Current [A] 1 ms 10 1 ID, Drain Current [A] 3 10 2 10 us 100 us 10 ms 30 DC 20 10 0 Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 10 -1 10 0 10 1 10 2 10 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Typical Drain Current Slope vs. Gate Resistance 4,000 3,500 3,000 2,500 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C o Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance 45 40 35 30 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C o di/dt [A/S] dv/dt [V/nS] di/dt(on) 2,000 1,500 1,000 500 0 25 20 15 10 5 0 dv/dt(on) dv/dt(off) di/dt(off) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 RG, Gate resistance [] RG, Gate resistance [] FDH50N50_F133 / FDA50N50 Rev. A 4 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Typical Switching Losses vs. Gate Resistance 1,000 Figure 14. Unclamped Inductive Switching Capability 100 Notes : 1. If R = 0 tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R 0 tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1] 800 600 IAS, Avalanche Current [A] Eoff Energy [J] Eon 400 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C o 10 Starting TJ = 150 C o Starting TJ = 25 C o 200 0 0 5 10 15 20 25 30 35 40 45 50 1 0.01 0.1 1 10 100 RG, Gate resistance [] tAV, Time In Avalanche [ms] Figure 15. Transient Thermal Resistance Curve 10 -1 D=0.5 0.2 0.1 0.05 Notes : o 1. Z JC(t) = 0.2 C/W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z JC(t) ZJC(t), Thermal Response 10 -2 0.02 0.01 single pulse 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square W ave Pulse Duration [sec] FDH50N50_F133 / FDA50N50 Rev. A 5 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Mechanical Dimensions TO-247AB Dimensions in Millimeters FDH50N50_F133 / FDA50N50 Rev. A 6 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FDH50N50_F133 / FDA50N50 Rev. A 7 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM tm FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 8 FDH50N50_F133 / FDA50N50 Rev. A www.fairchildsemi.com |
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