View CM1800HC-34N_4238241.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1800HC-34N
q IC ................................................................ 1800A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBTTM q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
1300.5 570.25 570.25 4 - M8 NUTS
4(C) C
2(C)
4
2
1240.25 1400.5 200.1 400.2
G
3
1
E 3(E) 1(E)
C
E
G
CIRCUIT DIAGRAM
3 - M4 NUTS
10.650.2 48.80.2
10.350.2
6 - 7 MOUNTING HOLES
61.50.3
screwing depth min. 7.7
screwing depth min. 16.5
150.2 400.2 5.20.2
180.2
38 +1 -0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
29.50.5
50.2
28 -0
+1
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 75C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 1800 3600 1800 3600 10000 -40 ~ +150 -40 ~ +125 -40 ~ +125 4000 10 Unit V V A A A A W C C C V s
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES 1700V, VGE = 15V Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec(Note 2)
Note 1. 2. 3. 4.
Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy
Conditions VCE = VCES, VGE = 0V, Tj = 25C IC = 180mA, VCE = 10V, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C IC = 1800A, VGE = 15V, Tj = 25C IC = 1800A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25C IE = 1800A, VGE = 0V, Tj = 25C (Note 4) IE = 1800A, VGE = 0V, Tj = 125C (Note 4) VCC = 850V, IC = 1800A, VGE = 15V RG(on) = 0.9, Tj = 125C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = 15V RG(off) = 2.2, Tj = 125C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = 15V RG(on) = 0.9, Tj = 125C, Ls = 100nH Inductive load
Min -- 6.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ -- 7.0 -- 2.15 2.40 264 14.4 4.2 10.2 2.60 2.30 1.00 0.40 550 1.20 0.30 560 1.00 720 420 280
Max 6 8.0 0.5 2.80 -- -- -- -- -- 3.30 -- -- -- -- -- -- -- -- -- -- --
Unit mA V A V nF nF nF C V s s mJ/pulse s s mJ/pulse s A C mJ/pulse
(Note 4) (Note 4)
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 11.0 Max 12.5 28.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- -- Limits Typ -- -- -- 0.8 -- -- -- 16 0.14 Max 20.0 6.0 3.0 -- -- -- -- -- -- Unit
M -- CTI da ds LC-E(int) RC-E(int)
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance
N*m kg -- mm mm nH m
IGBT part TC = 25C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 3600 Tj = 125C 3000 VGE = 15V VGE = 12V 3000 3600
TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V
COLLECTOR CURRENT (A)
2400
COLLECTOR CURRENT (A)
VGE = 20V
2400
1800
VGE = 10V
1800
1200
1200
600 VGE = 8V 0 0 1 2 3 4 5 6
600 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 5 VGE = 15V
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
4
EMITTER-COLLECTOR VOLTAGE (V)
Tj = 25C Tj = 125C
4
3
3
2
2
1
1 Tj = 25C Tj = 125C 0 0 600 1200 1800 2400 3000 3600
0
0
600
1200
1800
2400
3000
3600
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 1800A Tj = 25C
Cies GATE-EMITTER VOLTAGE (V)
5 7 102
16
CAPACITANCE (nF)
102
7 5 3 2
12
8
101
7 5 3 2
Coes
Cres VGE = 0V, Tj = 25C f = 100kHz
23 5 7 100 23 5 7 101 23
4
100 -1 10
0
0
2
4
6
8
10
12
14
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2000 VCC = 850V, VGE = 15V RG(on) = 0.9, RG(off) = 2.2 Tj = 125C, Inductive load SWITCHING ENERGIES (mJ/pulse) 3000
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 1800A, VGE = 15V Tj = 125C, Inductive load Eon
SWITCHING ENERGIES (mJ/pulse)
1600
2500
2000
1200
Eoff
1500 Eoff 1000
800 Eon 400
Erec
500 Erec
0
0
600
1200
1800
2400
3000
3600
0
0
2
4
6
8
10
12
COLLECTOR CURRENT (A)
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 600 VCC = 850V, VGE = 15V RG(on) = 0.9 Tj = 125C, Inductive load
REVERSE RECOVERY CHARGE (C)
VCC = 850V, VGE = 15V RG(on) = 0.9, RG(off) = 2.2 Tj = 125C, Inductive load
500
Qrr
SWITCHING TIMES (s)
td(off) 100
7 5 3 2
400
td(on)
tr tf
300
10-1
7 5 3 2
200
100
10-2 2 10
2
3
5
7 103
2
3
5
7 104
0
0
600
1200
1800
2400
3000
3600
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 5000 VCC 1200V, VGE = +/-15V Tj = 125C, RG(off) 2.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Single Pulse, TC = 25C Rth(j-c)Q = 12.5K/kW Rth(j-c)R = 28K/kW
1.0
4000
0.8
COLLECTOR CURRENT (A)
3000
0.6
2000
0.4
0.2
1000 Module Chip
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

▲Up To Search▲

Price & Availability of CM1800HC-34N

	To Download CM1800HC-34N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .