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| AP4424GM RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S S G 30V 9m 13.8A Fast Switching Characteristic SO-8 S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 25 13.8 11 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit /W Data and specifications subject to change without notice 1 200805233 AP4424GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 21 23 6 15 13 9 35 17 410 300 0.9 Max. Units 9 14 3 1 25 100 35 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=10V, ID=13A VGS=4.5V, ID=10A VDS=VGS, ID=250uA VDS=10V, ID=13A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=13A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1920 3070 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=2.1A, VGS=0V IS=13A, VGS=0V, dI/dt=100A/s Min. - Typ. 33 26 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4424GM 210 140 180 T A = 25 o C 10V 7.0V ID , Drain Current (A) 120 T A = 150 C o 10V 7.0V ID , Drain Current (A) 150 100 120 80 5.0V 4.5V V G =4.0V 5.0V 90 60 4.5V 60 40 V G =4.0V 30 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16 1.6 14 I D = 10 A T A =25 Normalized RDS(ON) 1.4 I D =1 3 A V G =10V RDS(ON) (m) 12 1.2 10 1.0 8 0.8 6 0.6 3 5 7 9 11 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3.00 12 10 2.50 8 T j =150 o C 6 T j =25 o C VGS(th) (V) IS(A) 2.00 4 1.50 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.00 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4424GM 16 10000 f=1.0MHz I D = 13 A VGS , Gate to Source Voltage (V) 12 8 C (pF) V DS =15V V DS =20V V DS =24V C iss 1000 4 C oss C rss 0 0 10 20 30 40 50 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 0.2 1ms ID (A) 10ms 1 0.1 0.1 0.05 100ms 1s 0.1 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W T A =25 o C Single Pulse 0.01 0.1 1 10 DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D SYMBOLS Millimeters MIN NOM MAX A 8 7 6 5 E1 1 E 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 0 1.55 0.18 0.41 0.22 4.90 3.90 6.15 0.71 4.00 1.27 TYP 1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 8.00 A1 B C D E1 E L 2 3 4 e B e A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4424GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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