Part Number Hot Search : 
PJP5NA80 C818H50 0R06K 5C1H102J BA6908F2 KP235 CZTA27 1936X234
Product Description
Full Text Search
 

To Download A1A50002 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 AEGIS
SEMICONDUTORES LTDA.
A1A:500.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 200OC A1A:500.02 A1A:500.04 A1A:500.06 A1A:500.08 200 400 600 800 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage
O
This datasheet applies to: Metric thread: A1A:500.XX, A1B:500.XX Inch thread: A2A:500.XX, A2B:500.XX
TJ = -40 to 0 C 200 400 600 800
TJ = 25 to 200 C 300 500 700 900
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 200 -40 to 200 500 125 950 10900 IFSM Max. Peak non-rep. surge current 11450 A 13000 13600 546 I2t Max. I2t capability 598 772 845 It
2 1/2
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 200 C, rated VRRM applied after surge.
O
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 200 C, no voltage applied after surge.
O
Initial TJ = 200OC, rated VRRM applied after surge.
O
kA2s
t = 8.3 ms t = 10ms t = 8.3 ms
O
Initial TJ = 200 C, no voltage applied after surge.
2
Max. I t
2 1/2
capability
Initial TJ = 200 C, no voltage applied after surge. 8450 30(~267) kA s
2 1/2
It
for time tx = I t
2 1/2
*
1/2 tx .
(0.1 < tx < 10ms). -
F Mounting Force
N.m(Lbf.in)
Rua Felicissimo de Souza, 44 - CEP: 05160-040 - Pirituba - Sao Paulo - SP - Brasil Tel. (Phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 E-mail: aegis@aegis.com.br - www.aegis.com.br
AEGIS
SEMICONDUTORES LTDA.
A1A:500.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF1 Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. 1.07 ----30 --------250(8.75) MAX. UNITS 1.15 0.68 0.07 40.00 0.20 0.20 0.24 0.03 --O
TEST CONDITIONS Initial TJ = 25OC, sinusoidal wave, peak = 1571A. I TJ = 200OC, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS) ]2, sine. Use low values for I < pIF(AV) FM TJ = 200 OC. Max. Rated VRRM
V V mW mA
O O
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O
g(oz.) JEDEC
DO-205AB (DO-9)
Maximum Allowable Case Temperature
200
200
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
190 180 170 160
30
Maximum Allowable Case Temperature (C)
180
160
30
150 140 130 120
120 60
140
60
120
90 120
90
100
180 DC
110
180
100 0
*Sinusoidal Waveform
80 0
*Rectangular Waveform
100
200
300
400
500
600
700
250
500
750
1000
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Rua Felicissimo de Souza, 44 - CEP: 05160-040 - Pirituba - Sao Paulo - SP - Brasil Tel. (Phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 E-mail: aegis@aegis.com.br - www.aegis.com.br
AEGIS
SEMICONDUTORES LTDA.
A1A:500.XX
Maximum Average Forward Power Loss
1800
1600
30
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
1600 1400 1200
1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800
30
60
60 90 120 180 DC
1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800
90 120 180
900 1000
900 1000
*Sinusoidal Waveform
*Rectangular Waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Forward Voltage Drop
Fig. 4 - Forward Power Loss Characteristics
10000
Transient Thermal Impedance vs. Time
0.25 Rthjh
Transient Thermal Impedance (C/W)
Instantaneous Forward Current (A)
0.20
1000
Rthjc
0.15
100
0.10
0.05
10 0.4
125C
25C
0.00 1E-3
0.01
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Time (s)
Instantaneous Forward Voltage (V)
Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics
Rua Felicissimo de Souza, 44 - CEP: 05160-040 - Pirituba - Sao Paulo - SP - Brasil Tel. (Phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 E-mail: aegis@aegis.com.br - www.aegis.com.br
AEGIS
SEMICONDUTORES LTDA.
A1A:500.XX
DO-205AB (DO-9)
Fig. 7 - Outline Characteristics
Rua Felicissimo de Souza, 44 - CEP: 05160-040 - Pirituba - Sao Paulo - SP - Brasil Tel. (Phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 E-mail: aegis@aegis.com.br - www.aegis.com.br


▲Up To Search▲   

 
Price & Availability of A1A50002

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X