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Ordering number : EN3218B
2SA1179 / 2SC2812
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179 / 2SC2812
Features
* *
Low-Frequency General-Purpose Amplifier Applications
Miniature package facilitates miniaturization in end products. High breakdown voltage.
Specifications ( ) : 2SA1179
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --55 to +150 Unit V V V mA mA mA mW C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--)35V, IE=0A VEB=(-)4V, IC=0A VCE=(--)6V, IC=(-)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=-6V, IC=--10mA 135* 100 (180) Ratings min typ max (--)0.1 (--)0.1 600* MHz MHz Unit A A
Marking: 2SA1179: M / 2SC2812: L *: The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws: Rank 5 6 7 hFE 135 to 270 200 to 400 300 to 600
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478 No.3218-1/5
2SA1179 / 2SC2812
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(-)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(-)10A, IC=0A (--)55 (--)50 (--)5 Ratings min typ (4.0)3.0 (--0.15)0.1 (-)0.5 (-)1.0 max Unit pF V V V V V
Package Dimensions
unit : mm (typ) 7013A-009
0.5
2.9
0.1
3
2.5
1.5
0.5
1
0.95
2
0.4
1 : Base 2 : Emitter 3 : Collector SANYO : CP
0.05
1.1
0.3
--16
IC -- VCE
2SA1179
Collector Current, IC -- mA
20
IC -- VCE
50A 45A
40A
2SC2812
Collector Current, IC -- mA
--12
--8
A --50 A --45 A --40 A --35 30A ---25A --20A --15A
--10A
16
35A
12
30A
25A
8
20A
15A
4
--4
--5A
0 0 --10 --20 --30
10A
5A IB=0A
40 50 IT12001
IB=0A
--40 --50 IT12000
0 0 10 20 30
Collector-to-Emitter Voltage, VCE -- V
--240
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
240
IC -- VBE
2SA1179 VCE= --6V
--200 200
2SC2812 VCE=6V
Collector Current, IC -- mA
Collector Current, IC -- mA
--160
160
Ta=75 C 25C --25C
--120
120
--80
80
--40
40
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT12002
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12003
Base-to-Emitter Voltage, VBE -- V
Base-to-Emitter Voltage, VBE -- V
Ta=75 C 25C --25C
No.3218-2/5
2SA1179 / 2SC2812
2
hFE -- IC
2SA1179 VCE= --6V
3 2
hFE -- IC
2SC2812 VCE=6V
1000
DC Current Gain, hFE
7 5
DC Current Gain, hFE
1000 7 5 3 2
3 2
Ta=75C 25C --25C
Ta=75C
25C --25C
100 7 5 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 7--100 2 3 IT12004
100 7 5 0.1 23 5 1.0 23 5 10 23 5 23 100 IT12005
Collector Current, IC -- mA
1000
f T -- IC
Collector Current, IC -- mA
1000
f T -- IC
Gain-Bandwidth Product, f T -- MHz
5 3 2
Gain-Bandwidth Product, f T -- MHz
7
2SA1179 VCE= --6V
7 5 3 2
2SC2812 VCE=6V
100 7 5 3 2 --1.0
100 7 5 3 2 1.0 2 3 5 7 2 3 5 7 100 2 3
2
3
5
7 --10
2
3
5
7 --100
2
3
5
10
Collector Current, IC -- mA
2
IT12006 2
Cob -- VCB
Collector Current, IC -- mA
IT12007
Cob -- VCB
2SA1179 f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
10 7 5 3 2
10 7 5 3 2
2SC2812 f=1MHz
1.0 7 5 3 2
1.0 7 5 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Collector-to-Base Voltage, VCB -- V
--1.0 7
7 --100 IT12008 3
5
7
1.0
2
3
5
7
10
2
3
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
7 100 IT12009
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
2SA1179 IC / IB=10
2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 1.0
2SC2812 IC / IB=10
--0.1 7 5 3 2
--0.01 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
5
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
IT12010
Collector Current, IC -- mA
IT12011
No.3218-3/5
2SA1179 / 2SC2812
2 10
hie, hre, hfe, hoe -- VCE
ho e
hfe
2 10
5 3 2
hie, hoe -- IC
2SC2812 f=1MHz
5 3
5 3
5
hfe -- 10 hre -- 104
hie -- k hoe -- S
2 1.0
2 1.0
10 7 5 3 2
10 7 5 3 2
V
hr e
5 3 2 0.1 5
5
2SA1179 f=270MHz IC= --1mA
7 --1.0 2 3 5 7 --10 2 3
3 2 0.1 IT12012 5 3
1.0 0.1
2
3
5
7
1.0
2
3
5
Collector-to-Emitter Voltage, VCE -- V
5 3 2 10
hie, hre, hfe, hoe -- IC
hi e
Collector Current, IC -- mA
5 3 2
1.0 10 IT12013 7 5
hre, hfe -- IC
2
h oe
10 5 3 2
hfe
hr eV CE =3 V 6V
2SC2812
3
=3V, 6V h fe V CE
2
hfe -- 10 hre -- 104
hre -- 104
5
hie -- k hoe -- S
1.0 7 5 3 2
100 7 5 3 2
2 1.0 5 3 2 0.1 5
hr e
1.0 5
2SA1179 f=270MHz VCE= --6V
7 --0.1 2 3 5 7 --1.0 2 3
3 2 0.1
0.1 0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
250
IT12014
PC -- Ta
Collector Current, IC -- mA
10 10 IT12015 7
2SA1179 / 2SC2812
Collector Dissipation, PC -- mW
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT12016
No.3218-4/5
hfe
3
hoe -- S
hie -- k
hie
3
hi eV CE
=3
V, 6
h oe
V
=3 CE
V
2
6V
2SA1179 / 2SC2812
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice.
PS No.3218-5/5

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