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| STTH806DTI Tandem 600 V hyperfast boost diode Table 1. Main product characteristics IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) 8A 600 V 150 C 2.24 V 4A 13 ns 2 1 1 2 Insulated TO-220AC Features and benefits Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes Insulation (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink Static and dynamic equilibrium of internal diodes are warranted by design Package Capacitance: C = 7 pF Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage RMS forward voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Description The TURBOSWITCH "H" is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. Table 2. Order codes Marking STTH806DTI Part number STTH806DTI Table 3. Symbol VRRM IF(RMS) IFSM Tstg Tj Value 600 14 tp = 10 ms sinusoidal 180 -65 to + 150 150 Unit V A A C C July 2007 Rev 5 1/7 www.st.com 7 Characteristics STTH806DTI 1 Table 4. Symbol Rth(j-c) Characteristics Thermal parameter Parameter Junction to case thermal resistance Value 2.6 Unit C/W Table 5. Symbol IR (1) VF (2) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Forward voltage drop Tj = 25 C Tj = 150 C VR = VRRM Min. Typ Max. 10 A 15 100 3.6 IF = 8 A V 1.95 2.4 Unit 1. Pulse test: tp = 100 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF2(RMS) Table 6. Symbol Dynamic characteristics Parameter Test conditions IF = 0.5 A, Irr = 0.25 A, IR = 1 A Min Typ Max Unit 13 ns 30 4 0.4 50 5.5 A trr IRM S Qrr Reverse recovery time Tj = 25 C I = 1 A, dI /dt = - 50 A/s F F VR = 30 V Reverse recovery current I = 8 A, VR = 400, Reverse recovery softness factor Tj = 125 C F VdIF/dt = - 200 A/s Reverse recovery charges Table 7. Symbol tfr VFP Turn-on switching characteristics Parameter Forward recovery time Forward recovery voltage Tj = 25 C Tj = 25 C Test conditions IF = 8 A, dIF/dt = 100 A/s VFR = 1.1 x VF max IF = 8 A, dIF/dt = 100 A/s Min. Typ Max. 200 7 Unit ns V 2/7 STTH806DTI Characteristics Figure 1. Conduction losses versus average Figure 2. current IFM(A) = 0.05 = 0.1 = 0.2 = 0.5 100 Forward voltage drop versus forward current P(W) 30 25 Tj=125C (maximum values) 20 =1 Tj=125C (typical values) 15 10 Tj=25C (maximum values) 10 T 5 IF(AV)(A) 0 0 1 2 3 4 5 6 7 =tp/T 8 9 tp 1 10 VFM(V) 0 1 2 3 4 5 6 7 8 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 IRM(A) 9 8 VR=400V Tj=125C IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 0.8 = 0.5 7 6 0.6 5 4 = 0.2 = 0.1 0.4 3 T 2 0.2 Single pulse tp(s) 0.0 1E-3 1E-2 1E-1 =tp/T tp 1E+0 1 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 5. trr(ns) 60 Reverse recovery time versus dIF/dt Figure 6. (typical values) Qrr(nC) 140 VR=400V Tj=125C VR=400V Tj=125C Reverse charges versus dIF/dt (typical values) 50 IF=2 x IF(AV) IF=IF(AV) 120 100 IF=2 x IF(AV) 40 IF=IF(AV) 80 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 30 60 20 40 10 20 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0 0 100 dIF/dt(A/s) 200 300 400 500 3/7 Characteristics STTH806DTI Figure 7. Softness factor versus dIF/dt (typical values) Figure 8. Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125 C) IF=IF(AV) VR=400V Reference: Tj=125C S 0.6 0.5 0.4 0.3 0.2 0.1 IF<2xIF(AV) VR=400V Tj=125C 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 350 400 450 500 IRM S dIF/dt(A/s) 0.0 0 50 100 150 200 250 300 Tj(C) 25 50 75 100 125 0.0 Figure 9. VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125C IF=IF(AV) Tj=125C dIF/dt(A/s) 50 100 150 200 250 300 350 400 450 500 20 0 0 100 dIF/dt(A/s) 200 300 400 500 4/7 STTH806DTI Package information 2 Package information Epoxy meets UL94, V0 Cooling method: C Recommended torque value: 0.4 to 0.6 Nm TO-220AC insulated dimensions Dimensions Ref. Millimeters Min. A B OI L F b2 C Table 8. Inches Min. Typ. Max. 0.625 0.147 Typ. Max. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 4.80 6.20 3.75 15.90 0.598 a1 a2 B b1 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 5.40 0.189 6.60 0.244 3.85 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.212 0.259 0.151 A I4 b2 C c2 a1 l2 c1 c2 e a2 M b1 e c1 F OI I4 L l2 M 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 2.60 2.95 0.104 1.70 0.044 0.102 0.116 0.066 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH806DTI 3 Ordering information Table 9. Ordering information Marking STTH806DTI Package TO-220AC Weight 2.3 g Base qty 50 Delivery mode Tube Part number STTH806DTI 4 Revision history Table 10. Date Oct-2003 May-2004 29-Jun-2005 Revision history Revision 2A 3 4 Initial release Reformatted Corrections to typographical errors. No technical changes. Reformatted to current standards. Removed IPEAK parameter from Table 3: Absolute ratings (limiting values). Changes 11-Jul-2007 5 6/7 STTH806DTI Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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