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FDP26N40 / FDPF26N40 N-Channel MOSFET
February 2008
FDP26N40 / FDPF26N40
N-Channel MOSFET
400V, 26A, 0.16 Features
* RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A * Low gate charge ( Typ. 48nC) * Low Crss ( Typ. 30pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
D
G GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 265 2.0 -55 to +150 300 26 15.6 104 1352 26 26.5 4.5 40 0.3 FDP26N40 FDPF26N40 400 30 26* 15.6* 104* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP26N40 0.5 0.5 62.5 FDPF26N40 3.0 62.5
o
Units C/W
(c)2008 Fairchild Semiconductor Corporation FDP26N40 / FDPF26N40 Rev. A
1
www.fairchildsemi.com
FDP26N40 / FDPF26N40 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP26N40 FDPF26N40 Device FDP26N40 FDPF26N40 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, VGS = 0V VDS = 320V, TC = 125oC VGS = 30V, VDS = 0V 400 0.5 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 13A VDS = 20V, ID = 13A
(Note 4)
3.0 -
0.13 25.5
5.0 0.16 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 320V, ID = 26A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
2400 390 30 48 15 20
3185 520 45 60 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 200V, ID = 26A RG = 25
(Note 4, 5)
-
45 100 115 66
100 210 240 140
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 26A VGS = 0V, ISD = 26A dIF/dt = 100A/s
(Note 4)
-
406 5.17
26 104 1.4 -
A A V ns C
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4mH, IAS = 26A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 26A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP26N40 / FDPF26N40 Rev. A
2
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FDP26N40 / FDPF26N40 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
70
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
100
ID,Drain Current[A]
ID,Drain Current[A]
10
10
150 C
o
-55 C
o
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
25 C *Notes: 1. VDS = 20V 2. 250s Pulse Test
o
0.1 0.02
1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 7 8 VGS,Gate-Source Voltage[V] 9
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.35
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.30
150 C 25 C
o
o
0.25
10
0.20
VGS = 10V VGS = 20V
0.15
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
2. 250s Pulse Test
0.10 0
20 40 60 ID, Drain Current [A]
80
1 0.2
0.6 1.0 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
5000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 100V VDS = 200V VDS = 320V
4000
Capacitances [pF]
8
3000
Ciss
*Note: 1. VGS = 0V 2. f = 1MHz
6
2000
4
Coss
1000
2
*Note: ID = 26A
Crss
0 0.1
0
1 10 VDS, Drain-Source Voltage [V]
30
0
10 20 30 40 Qg, Total Gate Charge [nC]
50
FDP26N40 / FDPF26N40 Rev. A
3
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FDP26N40 / FDPF26N40 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75
*Notes: 1. VGS = 10V 2. ID = 13A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -75
-25 25 75 125 o TJ, Junction Temperature [ C]
175
-25 25 75 125 o TJ, Junction Temperature [ C]
175
Figure 9. Maximum Safe Operating Area - FDP26N40
300
Figure 10. Maximum Safe Operating Area
28
100
100s
10s
24
ID, Drain Current [A]
ID, Drain Current [A]
1ms
10
10ms DC
20 16 12 8 4 0 25
1
Operation in This Area is Limited by R DS(on) *Notes:
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
0.01 1 10 100 VDS, Drain-Source Voltage [V]
800
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP26N40
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 Single pulse
PDM t1 t2
0.01
*Notes: 1. ZJC(t) = 0.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.002
10
-5
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FDP26N40 / FDPF26N40 Rev. A
4
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FDP26N40 / FDPF26N40 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP26N40 / FDPF26N40 Rev. A
5
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FDP26N40 / FDPF26N40 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP26N40 / FDPF26N40 Rev. A
6
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FDP26N40 / FDPF26N40 N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP26N40 / FDPF26N40 Rev. A
7
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FDP26N40 / FDPF26N40 N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
9.75 0.30
MAX1.47 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP26N40 / FDPF26N40 Rev. A
8
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Rev. I33
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