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| DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage General Description The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Ordering Information Device DN2540 Package Options TO-92 DN2540N3-G TO-220 DN2540N5-G TO-243AA(1) DN2540N8-G BVDSX/BVDGX (V) RDS(ON) max () IDSS min (mA) 400 25 150 -G indicates package is RoHS compliant (`Green') (1) Same as SOT-89. Pin Configurations DRAIN Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* O Value BVDSX BVDGX 20V -55 C to +150 C 300OC O SOURCE DRAIN GATE 3-Lead TO-92 (N3) GATE DRAIN SOURCE 3-Lead TO-220 (N5) DRAIN SOURCE GATE DRAIN Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. 3-Lead TO-243AA (N8) DN2540 Product Marking DN 2540 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging 3-Lead TO-92 (N3) DN5DW DN2540N5 LLLLLLLLL YYWW L = Lot Number YY = Year Sealed WW = Week Sealed = "Green" Packaging 3-Lead TO-220 (N5) W = Code for week sealed 3-Lead TO-243AA (N8) Thermal Characteristics Package TO-92 TO-220 TO-243AA ID (continuous)(1) (mA) ID (pulsed) (mA) Power Dissipation @TC = 25OC (W) jc ( C/W) O ja ( C/W) O IDR(1) (mA) IDRM (mA) 120 500 170 500 500 500 1.0 15 1.6 (2) 125 8.3 15 170 70 78 (2) 120 500 170 500 500 500 Notes: (1) ID (continuous) is limited by max rated Tj. (2) Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (TA @ 25OC unless otherwise specified) Sym BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS Parameter Drain-to-source breakdown voltage Gate-to-source OFF voltage Change in VGS(OFF) with temperature Gate body leakage current Drain-to-source leakage current Saturated drain-to-source current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Min 400 -1.5 150 Typ 17 325 200 12 1 Max -3.5 4.5 100 10 1.0 25 1.1 300 30 5 pF Units V V mV/OC nA A mA mA %/OC mmho Conditions VGS = -5.0V, ID = 100A VDS = 25V, ID = 10A VDS = 25V, ID = 10A VGS = 20V, VDS = 0V VDS = Max rating, VGS = -10V VDS = 0.8 Max Rating, VGS = -10V, TA = 125OC VGS = 0V, VDS = 25V VGS = 0V, ID = 120mA VGS = 0V, ID = 120mA VDS = 10V, ID = 100mA VGS = -10V, VDS = 25V, f = 1MHz 2 DN2540 Sym td(ON) tr td(OFF) tf VSD trr Parameter Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time Min Typ 800 Max 10 15 15 20 1.8 V ns VGS = -10V, ISD = 120mA VGS = -10V, ISD = 1.0A ns VDD = 25V, ID = 150mA, RGEN = 25, Units Conditions Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 0V 90% INPUT -10V 10% t(ON) td(ON) tr t(OFF) td(OFF) tF PULSE GENERATOR RGEN RL OUTPUT VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 3 DN2540 Typical Performance Curves Output Characteristics 0.5 VGS = 1.0V 0.5V 0.4 200 VGS = 1.0V 0.5V 0V 250 Saturation Characteristics 0.3 0V ID (milliamps) ID (amperes) 150 -0.5V 100 0.2 0.1 -0.5V 50 -1.0V 0 0 1 2 3 4 5 -1.0V 0 0 80 160 240 320 400 VDS (volts) Transconductance vs. Drain Current 0.5 VDS (volts) Power Dissipation vs. Ambient Temperature 20 VDS = 10V 0.4 TA = -55C TO-220 GFS (siemens) TA = 25C PD (watts) 0.3 10 0.2 TA = 125C 0.1 TO-243AA TO-92 0 0 50 100 150 200 250 0 0 25 50 75 100 125 150 (TA = 2 5 C ) ID (milliamps) Maximum Rated Safe Operating Area 1 1.0 TO-92/TO-220 (pulsed) (TA = 25C) TC (C) Thermal Response Characteristics TO-243AA TA = 25C 0.8 TO-220 (DC) Thermal Resistance (normalized) TO-243AA (DC) PD = 1.6W ID (amperes) 0.1 TO-92 (DC) 0.6 0.4 0.01 0.2 TO-220 TC = 25C PD = 15W TO-92 TC = 25C PD = 1.0W 0.001 1 TC = 25C 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 4 DN2540 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 100 On-Resistance vs. Drain Current 1.05 VGS = -5V 80 VGS = 0V BVDSS Normalized 1.0 RDS(on) (Ohms) -50 0 50 100 150 60 0.95 40 0.9 20 0 0 80 160 240 320 400 Tj (C) Transfer Characteristics 0.40 2.5 ID (milliamps) VGS(off) and RDS Variation with Temperature TA = -55C 0.32 VDS = 10V TA = 25C 2 ID (amperes) RDS (ON) @ ID = 120mA 0.24 Normalized TA = 125C 0.16 1.5 1 VGS(OFF) @ 10A 0.08 0.5 0 -3 2 -1 0 1 2 0 -50 0 50 100 150 VGS (Volts) Capacitance Vs. Drain-to-Source Voltage 200 Tj (C) Gate Drive Dynamic Characteristics 15 CISS 150 C (Picofarads) 10 VGS (Volts) 200pF 5 100 VGS = -10V VDS = 20V 0 50 VDS = 40V CRSS 0 0 10 20 30 COSS 40 -5 170pF 0 0.4 0.8 1.2 1.6 2.0 VDS (Volts) QC (Nanocoulombs) 5 DN2540 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L b e1 e C Front View Side View E1 E 1 2 3 Bottom View Symbol MIN Dimension (inches) NOM MAX Drawings not to scale. A .170 .210 b .014 .022 C .014 .022 D .175 .205 E .125 .165 E1 .080 .105 e .095 .105 e1 .045 .055 L .500 - 6 DN2540 3-Lead TO-220 (Power Package) Package Outline (N5) A E E2 Q H1 4 D D1 Chamfer Optional 1 2 3 E1 D2 P A Seating Plane A1 E Thermal Pad Detail B L A2 e c A Front View Side View View A - A 1 2 3 L1 b2 b Detail B Symbol MIN Dimension (inches) NOM MAX A .140 .190 A1 .020 .055 A2 .080 .115 b .015 .027 .040 b2 .045 .057 .070 c .014 .024 D .560 .650 D1 .330 .355 D2 .480 .507 E .380 .420 E1 .270 .350 E2 .030 e H1 .230 L .500 .580 L1 .250 Q .100 .135 P .139 .161 .100 BSC .270 JEDEC Registration TO-220, Variation AB, Issue K, April 2002. Drawings not to scale. 7 DN2540 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 4 C EH E1 1 L b e 2 3 b1 e1 A Top View Side View Symbol MIN Dimensions (mm) NOM MAX A 1.40 1.60 b 0.44 0.56 b1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 E1 2.13 2.29 e 1.50 BSC e1 3.00 BSC H 3.94 4.25 L 0.89 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN2540 A100907 8 |
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