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CHA6518
RoHS COMPLIANT
5 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 m Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * the backside of the chip is both RF and DC grounded * bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Vg Vg Vd
Main Features
n n n n n n 0.25 m Power pHEMT Technology 5 - 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm
Vg
Vd
50 IN
Input matching
Interstage
Stage 1 / Stage 2
Interstage
Stage 2 / Stage 3
Output 50 combiner
OUT
Vd
Vg
Vd Vg Vd
Vd = 8 V
Main Characteristics
Tamb = +25C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain
Min 5
Typ 33.5 24
Max 18
Unit GHz dBm dB
Ref. : DSCHA65185007 - 7 Jan 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 - 18 GHz High Power Amplifier
Electrical Characteristics
Tamb = 25C (2), Vd=8V, Ic (Quiescient) = 1A, CW biasing mode Symbol
F_op G_lin_1 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_3 P_sat_4 P_sat_5 P_sat_6 P_sat_7 PAE_sat Vd Id Vg Top NF
CHA6518
Parameter Operating frequency Linear gain Linear gain variation versus temperature Input Return Loss Output Return Loss Saturated output power (5 to 6 GHz) Saturated output power (6 to 7 GHz) Saturated output power (8 to 10 GHz) Saturated output power (11 to 12 GHz) Saturated output power (13 to 14 GHz) Saturated output power (15 to 17 GHz) Saturated output power (18 GHz) Power Added Efficiency in saturation Positive supply voltage Power supply quiescent current (1) Negative supply voltage Operating temperature range (2) Noise Figure
Min 5 20 5.5 3.5 32.5 33 32.5 32 32.5 33 32 11
Typ 24 -0.045 10 10 33 34 33 32.5 33 34 32.5 20 8 1 -0.8
Max 18
-30 5
+80
Unit GHz dB dB/C dB dB dBm dBm dBm dBm dBm dBm dBm % V A V C dB
(1) This parameter is fixed by gate voltage Vg (2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol Pin (2) Vd (2) Id (2) Ig (2) Pd (2) Tj Tstg
(1) (2)
Parameter Input continuous power Positive supply voltage without RF power Positive supply quiescent current Gate supply current Power dissipation Junction temperature Storage temperature range
Values 17 9 1.5 88 13.5 175 -55 to +125
Unit dBm V A mA W C C
Operation of this device above anyone of these parameters may cause permanent damage. These values are specified for Tamb = 25C
Ref. DSCHA65185007 - 7 Jan 05
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 - 18 GHz High Power Amplifier
Typical measured characteristics
Measurements in test fixture : Tamb=25C, Vd=8V, Id (Quiescient) = 1A, CW Biasing mode, Pin=13dBm
CHA6518
CHA6518 : Maximum Output Power @ 25C
38 37 36 35 34 33 32 31 30 29 28
Pout (dBm)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Freq (GHz)
CHA6518 : Power Added Efficieny @ 25C
40 35 30
PAE (%)
25 20 15 10 5 0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Freq (GHz)
Ref. DSCHA65185007 - 7 Jan 05
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 - 18 GHz High Power Amplifier
CHA6518
CHA6518 : Gain @ Pin=-5dBm & Pin=13dBm
28 27 26 25
Gain(dB) @ Pin=-5dBm Gain(dB) @ Pin=13dBm
Gain (dB)
24 23 22 21 20 19 18
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Freq (GHz)
Ref. DSCHA65185007 - 7 Jan 05
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 - 18 GHz High Power Amplifier
CHA6518
CHA6518 : Noise Figure @ 25C
28 26 12 11 10 9 Chip1 Gain Chip2 Gain Chip1 NF Chip2 NF 22 20 18 16 14 12 10 8 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 8 7 6 5 4 3 2
Small Signal Gain (dB)
24
Freq (GHz)
Ref. DSCHA65185007 - 7 Jan 05
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
NF (dB)
5 - 18 GHz High Power Amplifier
Chip Mechanical Data and Pin references
CHA6518
16 15
14
13 12 11
10
9 17 12 3 4 5 6 7 8
Chip thickness = 70m +/- 10m HF pads (9, 17) = 118 x 196 DC pads (2, 3, 4, 5, 13, 14) = 96 x 96 DC pads (6, 12) = 268 x 96 DC pads 15 = 280 x 96 DC pads (8, 10) = 188 x 96 Pin number 17 4, 14 3, 6, 12, 15 1, 7,11, 16 2, 5, 8, 10, 13 9 Pin name IN VG GND VD OUT Description Input RF port NC Negative supply voltage Ground (NC) Positive supply voltage Output RF port
Ref. DSCHA65185007 - 7 Jan 05
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 - 18 GHz High Power Amplifier
Assembly recommendations
CHA6518
C2
C2
C1
C1
C1
C1
Vg Lbonding
Vd Lbonding
C1
C1 C1
C1
C1
C2
C2
For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table: Port IN (17) OUT (9) VD (2, 5, 8, 10, 13) VG (3, 6, 12, 15) Connection Inductance (Lbonding) = 0.3nH Inductance (Lbonding) = 0.3nH Inductance 1nH Inductance 1nH External capacitor
C1 ~ 100pF C2 ~ 100nF C1 ~ 100pF C2 ~ 100nF
Ref. DSCHA65185007 - 7 Jan 05
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 - 18 GHz High Power Amplifier
CHA6518
Ordering Information
Chip form : CHA6518-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S
Ref. DSCHA65185007 - 7 Jan 05
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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