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CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 m Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: * the backside of the chip is both RF and DC grounded * bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Output Power versus Frequency
Vg
Vd3
Main Features
0.25 m Power pHEMT Technology 6 - 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm
INPUT A OUTPUT A
Vd1
Vd2
Vd3
INPUT B
OUTPUT B
Vg
Vd3
Main Characteristics
Tamb = +25 (Tamb is the back-side of the chip) C Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm dB
Ref. : DSCHA6517-8205 - 25 Jun 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
Electrical Characteristics
X-band High Power Amplifier
Tamb = 25 (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel C Symbol
F_op G_lin RL_in RL_out Psat PAE_sat Vd Id Vg Top
Parameter Operating frequency Linear gain (Pin=-5dBm) Input Return Loss Output Return Loss Saturated output power (Pin=11dBm) Power Added Efficiency in saturation Positive supply voltage Power supply quiescent current (1) Negative supply voltage Operating temperature range (2)
Min 6 19
Typ 22 -14 -8 32 15 8 0.6 -0.4
Max 18 -8 -4
30
-40
+70
Unit GHz dB dB dB dBm % V A V C
(1) This parameter is fixed by gate voltage Vg (2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol Pin (2) Vd (2) Id (2) Pd (2) Tj Tstg
(1) (2)
Parameter Maximum Input power Positive supply voltage without RF power Positive supply quiescent current Power dissipation Junction temperature Storage temperature range
Values 19 8.5 1 13.5 175 -55 to +125
Unit dBm V A W C C
Operation of this device above anyone of these parameters may cause permanent damage. These values are specified for Tamb = 25 C
Ref. : DSCHA6517-8205 - 25 Jun 08
2/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
On Wafer Measurements, S parameters (one channel): Tamb=25 Vd=8V, Id (Quiescient) = 0.6A, pulsed mo de: C,
CHA6517
Gain
dBS22
dBS11
Input and Output Return losses
Ref. : DSCHA6517-8205 - 25 Jun 08
3/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
X-band High Power Amplifier
On Wafer Measurements (one channel): Tamb=25 Vd=8V, Id (Quiescient) = 0.6A, Pin=11dBm , pulsed mode: C,
Output Power versus Frequency
18GHz
12GHz
6GHz
Id versus Pin
Ref. : DSCHA6517-8205 - 25 Jun 08
4/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
In test jig Measurements (one channel): Vd=8V, Id (Quiescient) = 0.6A, S parameters, CW mode:
Temp= -40 C Temp= +25 C Temp= +70 C
CHA6517
Gain versus Frequency and Temperature (-40 +25 and +70 C, C C)
dBS22
dBS11
Input and Output Return losses versus Frequency and Temperature
Ref. : DSCHA6517-8205 - 25 Jun 08 5/10 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
X-band High Power Amplifier
In test jig Measurements (one channel): Vd=8V, Id (Quiescient) = 0.6A, Power measurements, CW mode
Temp.=-40 C
Temp.=+25 C Temp.=+70 C
Output power versus Frequency and Temperature (Pin=+12dBm)
Pin=-5dBm Pin=+12dBm Pin=+15dBm
Pin=+17dBm Pin=+19dBm
Gain versus Frequency and Input power (Temp.=+25 C)
Ref. : DSCHA6517-8205 - 25 Jun 08
6/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA6517
Temp.=-40 C
Temp.=+70 C
Temp.=+25 C
Output power versus Frequency and Temperature (Freq=18GHz)
Temp.=-40 C
Temp.=+25 C
Temp.=+70 C
Id current versus Frequency and Temperature (Pin=+17dBm)
Ref. : DSCHA6517-8205 - 25 Jun 08
7/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
X-band High Power Amplifier
Chip Mechanical Data and Pin references
120
1 840 1 990
1 290
6
3 470 3 270 120
2
3
4
5
1 7
3 90035
2 075 1 820
11
985
2 075 825
10 13
9 14
8 15
1 12
4 200 3 145 2 945 2 150 1 750 955 755 4 200 4 190
3 770
3 745
16 22
630 430
21 20 19 18 17
130 120 1 290 000 000 1 840 1 990
4 32035
Chip thickness = 70m +/- 10m HF pads (1, 7, 16, 22) = 118 x 196 DC pads = 96 x 96 Pin number 1, 22 2, 3, 4, 19, 20, 21 5, 9, 14, 18 6, 8, 10, 11, 12, 13, 15, 17 7, 16 Pin name IN VG GND VD OUT Description Input RF port Negative supply voltage Ground (NC) Positive supply voltage Output RF port
Ref. : DSCHA6517-8205 - 25 Jun 08
8/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
4 195
X-band High Power Amplifier
CHA6517
Assembly recommendations (one channel)
For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF and DC connections should be done according to the following table: Port IN (1, 22) OUT (7, 16) VD (6, 8, 10, 11, 12, 13, 15, 17 ) VG (2, 3, 4, 19, 20, 21) Connection Inductance (Lbonding) = 0.3nH Inductance (Lbonding) = 0.3nH Inductance 1nH Inductance 1nH External capacitor
C1 ~ 22pF C3~ 1nF C4~100nF C2~ 120pF
Ref. : DSCHA6517-8205 - 25 Jun 08
9/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
X-band High Power Amplifier
Ordering Information
Chip form : CHA6517-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S
Ref. : DSCHA6517-8205 - 25 Jun 08
10/10
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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