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SRFET
AO4716 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4716 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =16.5A (VGS = 10V) RDS(ON) < 7m (VGS = 10V) RDS(ON) < 10m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S
G
Absolute Maximum Ratings TA=25C unless otherwise noted Maximum Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current
B B
Symbol VDS VGS
10 Sec
Steady State
30 20 16.5 12.0 9.6 180 25 94 3.1 2.0 1.7 1.1 -55 to 150 13.0
Units V V A A A mJ W C
TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C
Repetitive avalanche energy L=0.3mH B Power Dissipation TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter
Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State
Symbol RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=13A Forward Transconductance VDS=5V, ID=16.5A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=16.5A TJ=125C 1.3 180 5.8 9.9 8.2 55 0.33 0.5 5.5 2154 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 474 185 0.75 37 VGS=10V, VDS=15V, ID=16.5A 17.8 6.6 7.6 6.8 VGS=10V, V DS=15V, R L=0.8, RGEN=3 IF=16.5A, dI/dt=300A/us IF=16.5A, dI/dt=300A/us 7.2 25.2 5.8 12 10.5 18 1.1 45 23 2650 7.0 12.3 10.0 1.6 Min 30 0.1 20 0.1 2 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25C. The value in A any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R and lead to ambient. JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA curve A provides a single pulse rating. F. The current rating is based on the t10s thermal resistance rating. Rev1:May 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180 10V 150 120 ID (A) 90 60 30 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 12 10 RDS(ON) (m) 8 6 4 2 0 5 10 15 20 25 30 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 13 11 RDS(ON) (m) 9 7 5 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C VGS=10V Normalized On-Resistance 1.8 ID=16.5A VGS=4.5V 1.6 1.4 VGS=4.5V 1.2 1 VGS=10V 7V 4.5V 20 ID(A) 4V 3.5V VGS=3V 15 10 25C 5 0 1 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics 125C 6V 5V 25 30 VDS=5V
ID=16.5A 125C IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 500 0 0 8 16 24 32 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 3500 3000 Capacitance (pF) VDS=15V ID=16.5A 2500 2000 1500 1000 Crss Coss Ciss
1000.0 TJ(Max)=150C T A=25C 100.0 ID (Amps) 10.0 0.1s 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 RDS(ON) limited 10s DC 10s Power (W) 100 1ms 1s
100 80 60 40 20 0 0.0001 TJ(Max)=150C TA=25C
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=75C/W 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1.0E-02 VDS=24V IR (A) 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0 100 150 200 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 8 di/dt=800A/us 125C 7 25C Irm (A) trr (ns) Qrr 125C 6 20 15 10 5 125C 4 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 125C 50 40 Qrr (nC) 30 20 10 0 0 Irm 200 400 600 800 Qrr Is=20A 25C 125C 25C 8 7 6 Irm (A) 5 4 3 2 1 0 1000 trr (ns) 35 30 25 20 15 10 5 0 0 200 400 600 800 0 1000 125C 25C 25C trr S 1 125C Is=20A 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current trr 25 di/dt=800A/us 125C 50 VSD(V) VDS=12V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 2.5 2 25C 1.5 S 25C 1 0.5 0 50 IS=1A 5A 20A 10A
70 60 50 Qrr (nC) 40 30 20 10 0 Irm
25C
5
3
2 S
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S

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