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| AEGIS SEMICONDUTORES LTDA. A3L:160DT.XXH VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125OC A3L:160TD.02H A3L:160TD.04H A3L:160TD.06H A3L:160TD.08H A3L:160TD.10H A3L:160TD.12H A3L:160TD.14H A3L:160TD.16H 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O O TJ = 25 to 125 C TJ = -40 to 0 C 200 400 600 800 1000 1200 1330 1520 300 500 700 900 1100 1300 1500 1700 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 160 85 355 4.38 IFSM Max. Peak non-rep. surge current 4.77 kA 4.99 5.44 99 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 125 C, no voltage applied after surge. O UNITS O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 125 C, rated VRRM applied after surge. O C C C O A O IF(RMS) Nom. RMS current A 108 I t Max. I t capability 113 123 It 2 1/2 2 2 t = 8.3 ms kA s t = 10ms t = 8.3 ms kA2s1/2 2 Initial TJ = 125 C, rated VRRM applied after surge. O O Initial TJ = 125 C, no voltage applied after surge. 2 Max. I t 2 1/2 capability 1350 Initial TJ = 125OC, no voltage applied after surge. 2 1/2 1/2 tx . It di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 500 10 3 150 2 3(5) A/ms W W mA V N.m for time tx = I t * (0.1 < tx < 10ms). O TJ = 125 C, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:160DT.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------TYP. ----------0.7 125 140 --10 --80 --------------200(7.27) "Int-A-Pak" MAX. UNITS 1.58 0.88 1.45 300 500 1.5 200 --1000 50 300 150 --2.5 0.3 0.08 0.086 0.091 0.05 --mA mA V V V mW mA mA ms ms O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 502A. O TJ = 125 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. O TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 C. Exp. to 100% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 O Rated VRRM and VDRM, gate open. C, TC = -40 C TC = 25OC TC = -40 C O O O O O O V/ms +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25 C TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, single side cooled. O C/W 180 sine wave, single side cooled. O C/W 120 rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) IR Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 120 120 Maximum Allowable Case Temperature 110 110 100 100 90 90 80 30 80 30 60 70 60 90 120 70 90 60 0 *Sinusoidal Waveform 180 60 *Rectangular Waveform 120 180 DC 50 100 150 200 250 0 25 50 75 100 125 150 175 200 225 250 275 300 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A3L:160DT.XXH Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss 3000 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 3000 2500 30 2500 2000 2000 60 1500 90 1500 60 1000 1000 90 120 180 120 180 500 500 DC 0 0 *Sinusoidal Waveform 0 *Rectangular Waveform 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Forward Voltage Drop 1000 1 Transient Thermal Impedance ZthJC Instantaneous Forward Current (A) Transient Thermal Impedance ZthJC 1.5 2.0 2.5 3.0 3.5 100 0.1 125C 25C 10 0.5 1.0 0.01 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance AEGIS SEMICONDUTORES LTDA. A3L:160DT.XXH Fig. 7 - Gate Trigger Characteristics 1 ~ G1 K1 + K2 2 G2 - 3 Fig. 8 - Outline Characteristics Fig. 9 - Circuit Layout |
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