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| (R) STTH8003CY HIGH FREQUENCY SECONDARY RECTIFIERS MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS n 2x40 A 300 V 1V 60 ns n n COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE. ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. HIGH OPERATING TEMPERATURE THANKS TO LOW LEAKAGE CURRENT. A2 K A1 DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in Max247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tc = 105C = 0.5 Per diode Per device tp = 10 ms sinusoidal tp = 100 s square Value 300 50 40 80 400 4 -55 +175 + 175 Unit V A A A A C C Max247 Surge non repetitive forward current Non repetitive avalanche current Storage temperature range Maximum operating junction temperature September 2002 - Ed: 3A 1/5 STTH8003CY THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Parameter Junction to case thermal resistance Per diode Total Coupling Value 0.8 0.5 0.2 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions VR = 300 V Tj = 25C Tj = 125C VF ** Forward voltage drop IF = 40 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.0062 IF(RMS)2 0.85 80 Min. Typ. Max. 80 800 1.25 1 V Unit A DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A IRM Sfactor tfr VFP IF = 40 A dIF/dt = 200 A/s, VFR = 1.1 x VF max Tj = 25C Tests Conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1 A VR = 30 V Tj = 125C 0.3 450 5 Tj = 25C Min. Typ. Max. 50 60 13 A ns V Unit ns Vcc = 200 V IF = 40 A dIF/dt = -200 A/s 2/5 STTH8003CY Fig. 1: Conduction losses versus average current (per diode) Fig. 2: Forward voltage drop versus forward current (per diode) P(W) 55 50 45 40 35 30 25 20 15 10 5 0 = 0.5 = 0.2 = 0.1 = 0.05 =1 IFM(A) 200 100 Tj=125C Typical values Tj=125C Maximum values Tj=25C Maximum values 10 T IF(av) (A) =tp/T tp VFM(V) 0 5 10 15 20 25 30 35 40 45 50 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 = 0.5 IRM(A) 25 VR=200V Tj=125C IF=2 x IF(av) IF=IF(av) 20 15 IF=0.5 x IF(av) = 0.2 = 0.1 10 T Single pulse tp(s) 1E-2 1E-1 5 =tp/T tp dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0.0 1E-3 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode) Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode) trr(ns) 180 160 140 120 100 80 60 40 20 0 VR=200V Tj=125C S factor 0.6 VR=200V Tj=125C 0.5 IF=2 x IF(av) IF=IF(av) 0.4 0.3 0.2 IF=0.5 x IF(av) 0.1 0.0 0 50 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 3/5 STTH8003CY Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference: Tj = 125C) Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 VFP(V) 10 S factor IF=IF(av) Tj=125C 8 6 IRM 4 2 Tj(C) 50 75 100 125 0 0 50 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode) tfr(ns) 500 400 300 200 100 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 IF=IF(av) VFR=1.1 x VFmax Tj=125C 4/5 STTH8003CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. Millimeters Min. E A Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169 Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30 A A1 b b1 D 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 b2 c D L1 A1 L b1 b2 e b c e E L L1 Ordering code STTH8003CY n n Marking STTH8003CY Package Max247 Weight 4.4 g. Base qty 30 Delivery mode Tube Cooling method: C Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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