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RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
Package Style: SOT, 8-Lead
Features
Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package
RF OUT1 GND RF OUT2 EN1
1 2 3 4
8 7 6 5
RF IN1 GND RF IN2 EN2
Applications
GSM/DCS Dual-Band Handsets Cellular/PCS Dual-Band Handsets General Purpose Amplification Commercial and Consumer Systems
Functional Block Diagram
Product Description
The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for 950MHz GSM/1850MHz DCS applications and may be used for dual-band cellular/PCS applications. The 900MHz LNA is a single-stage amplifier; the 1900MHz LNA is a 2-stage amplifier. The part may also be tuned for applications in other frequency bands. The device has an excellent combination of low noise figure and high linearity at a very low supply current. It is packaged in a very small industry standard SOT 8-lead plastic package.
Ordering Information
RF2363 RF2363 PCBA Dual-Band 3V Low Noise Amplifier Fully Assembled Evaluation Board
Optimum Technology Matching(R) Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev B3 DS040114
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2363
Absolute Maximum Ratings Parameter
Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +6.0 +10 -40 to +85 -40 to +150
Unit
VDC dBm C C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Parameter
Overall
RF Frequency Range
Min.
Specification Typ.
800 to 1000 1800 to 2000
Max.
Unit
MHz MHz
Condition
950MHz Performance
Gain Isolation Gain Step Noise Figure Output IP3 Input P1dB Reverse Isolation Input VSWR Output VSWR +17 16 18 16 34 1.3 +24 -10 20 1.8:1 1.8:1 2:1 2:1 20 dB dB dB dB dBm dBm dB
T = 25C, RF=950MHz, VCC =2.8V, EN1=2.8V, EN2=0V EN1=0V Gain - Isolation
No external matching With external match as per GSM/DCS Application Schematic T = 25C, RF=1850MHz, VCC =2.8V, EN2=2.8V, EN1=0V
1850MHz Performance
Gain Isolation Gain Step Noise Figure Output IP3 Input P1dB Reverse Isolation Input VSWR Output VSWR +16 20 21.5 10 31.5 1.4 +22 -12 30 1.7:1 1.7:1 2:1 2:1 24 dB dB dB dB dBm dBm dB
EN2=0V Gain - Isolation
No external matching With external match as per GSM/DCS Application Schematic V V T = 25 C V V mA Specifications Operating limits 900MHz LNA Enabled, 1900MHz LNA Disabled; total DC current
LNA Select
"Enable" Voltage "Disable" Voltage VCC 0 2.8 2.5 to 5.0 Current Consumption 5
Power Supply
Voltage
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Rev B3 DS040114
RF2363
7.5 1 mA A 1900MHz LNA Enabled, 900MHz LNA Disabled; total DC current EN1=EN2=0V
Rev B3 DS040114
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2363
Pin 1 Function RF OUT1 Description
RF output pin for ~900MHz LNA. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. It is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. NOTE: Ground traces on pins 2 and 7 are equivalent to a small amount of inductance (~0.75nH). The dimensions of these lines are as follows. Pin 2: L=56mils, W=15mils, H=31mils Pin 7: L=56mils, W=15mils, H=31mils Dielectric is FR-4. RF output pin for ~1900MHz LNA. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. It is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics.
Interface Schematic
RF OUT1 RF IN1
To Bias Circuits
2
GND
LNA1
LNA2
Pin 2 Pin 7
3
RF OUT2
EN2 RF OUT2 RF IN2
4 5 6 7 8
EN1 EN2 RF IN2 GND RF IN1
Enable pin for ~900MHz LNA. A voltage equal to the supply voltage LNA. This pin should be disabled (0V) when the ~1900MHz LNA is in use. Enable pin for ~1900MHz LNA. A voltage equal to the supply voltage LNA. This pin should be disabled (0V) when the ~900MHz LNA is in use. See package drawing for description of pin orientation. RF input pin for ~1900MHz. This pin is matched to approximately 50 at DCS/PCS frequencies. An external AC coupling capacitor is required at this pin. Same as pin 2. RF input pin for ~900MHz. This pin is matched to approximately 50 at GSM/Cellular frequencies. An external AC coupling capacitor is required at this pin.
See pin 3.
See pin 3.
See pin 2. See pin 1.
Package Drawing
1.59 1.61 0.365 TEXT* 0.15 0.05
2.80 3.00
0.650 2.60 3.00
*W hen Pin 1 is in upper left, text reads downward (as shown).
1.44 1.04 3M AX 0M IN 0.127
0.35 0.55
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Rev B3 DS040114
RF2363
RF2363 Theory of Operation and Application Information
The RF2363 contains two independent low noise amplifiers which have been optimized for dual-band applications in the GSM (905MHz to 960MHz) and DCS (1805MHz to 1880MHz) frequency bands. Fabricated using heterojunction bipolar transistor (HBT) technology, the RF2363 delivers high linear gain at a very low noise figure and low power consumption. Internal temperature compensation keeps the gain tightly controlled over temperature extremes (typically less than 1dB of gain variation from -40C to +85C at 2.8V). A 50 input impedance allows the part to be connected to standard receiver front end filters without additional matching components. MODE CONTROL The RF2363 incorporates two enable pins (EN1 and EN2) for biasing the desired LNA according to the table below.
EN1 GND GND VCC EN2 GND VCC GND Mode Power Down 1900MHz LNA On 900MHz LNA On
900MHz LNA The 900MHz LNA is a single-stage, common emitter amplifier. Since the input pin contains a DC bias, an AC coupling capacitor is required at this pin. An external bias inductor from the output pin (RF OUT1) to VCC provides DC biasing for the amplifier transistor and assists in matching the output impedance to the next receiver stage. A capacitor having a good RF bypass characteristic at the frequency of operation should be placed as close as possible to the supply voltage side of the bias inductor; a low frequency bypass capacitor should also be included. The EN1 pin supplies VCC to the bias circuits of the LNA and should also be effectively bypassed with both low and high frequency capacitors. 1900MHz LNA The 1900MHz LNA is implemented by two common emitter stages in cascade. The first stage is biased through an external inductor at the EN2 pin. This inductor also acts as an interstage match; a resistor in parallel with the inductor is recommended to 'de-Q' the inductor, thus providing a broader band interstage match. An external bias inductor from the output pin (RF OUT2) to VCC provides DC biasing for the second stage transistor and assists in matching the output impedance to the next receiver stage. Low and high frequency bypass capacitors should be used on the supply side of both the EN2 and RF OUT2 bias inductors. An AC coupling capacitor is required at the RF IN2 pin. LAYOUT CONSIDERATIONS To provide optimal balance of gain and linearity, a small amount of inductance is required in the ground traces of the PCB. The recommended inductance is between 0.5 and 1.0nH, with 0.75nH used on the Evaluation Board. Depending on the application, more gain with less linearity or more linearity with less gain may be desired. Appropriate adjustment of the ground inductance can accomplish these objectives. Minimizing the ground inductance will maximize the gain at the expense of linearity while increasing the ground inductance will increase the linearity at the expense of gain. It is important to remember that the pin 7 ground inductance affects the performance of both LNAs, while the pin 2 ground inductance affects only the 1900MHz LNA.
Rev B3 DS040114
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2363
Application Schematic (GSM/DCS)
EN1 10 nF EN2 10 nF 47 pF 1 k 3.9 nH 5 22 nF RF IN2 6 7 22 nF RF IN1 8 1 12 nH VCC Note orientation of package in this schematic. 100 pF 10 nF 3 1 pF 2 2 pF RF OUT1 4 3.3 nH VCC RF OUT2 100 pF 47 pF 10 nF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P2 P2-1 1 2 Note orientation of package in this schematic. EN1 C9 10 nF EN2 C12 10 nF C11 47 pF R1 1 k 50 strip L1 3.9 nH C1 22 nF 0.75 nH J4 RF IN1 50 strip C2 22 nF 5 6 7 8 U1 4 3 2 1 L3 12 nH C5 2 pF VCC 0.75 nH 50 strip J1 RF OUT1 L2 3.3 nH C10 100 pF C7 47 pF C6 1 pF C8 10 nF VCC 50 strip CON2 VCC GND P1-3 P1-4 P1-1 P1 1 2 3 4 CON4 EN2 GND EN1 VCC
J3 RF IN2
J2 RF OUT2
Notes: Ground traces on pins 2 and 7 are equivalent to a small amount of inductance (-1 nH). The dimensions of these lines are as follows. Pin 2: L = 56 mils, W = 15 mils, H = 31 mils Pin 7: L = 56 mils, W = 15 mils, H = 31 mils Dielectric is FR-4
C3 100 pF
C4 10 nF
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Rev B3 DS040114
RF2363
Evaluation Board Layout Board Size 1.0" x 1.0"
Board Thickness 0.031", Board Material FR-4
Rev B3 DS040114
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2363
19.0
Gain versus Frequency 900 MHz LNA
-40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
23.0
Gain versus Frequency 1900 MHz LNA
-40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
18.8
22.5
18.6 22.0
Gain (dB)
Gain (dB)
930.0 935.0 940.0 945.0 950.0 955.0 960.0
18.4
21.5
18.2
21.0 18.0 20.5
17.8
17.6 925.0
20.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
1.5 2.8V 3.2V 1.4
Noise Figure versus Frequency 900 MHz LNA
2.0 1.9 1.8 1.7 2.8V 3.2V
Noise Figure versus Frequency 1900 MHz LNA
Noise Figure (dB)
1.3
Noise Figure (dB)
930.0 935.0 940.0 945.0 950.0 955.0 960.0
1.6 1.5 1.4 1.3
1.2
1.1
1.2 1.1
1.0 925.0
1.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
0.0 -1.0
Input 1 dB Compression Point versus Frequency 900 MHz LNA
-40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
-6.0 -7.0
Input 1 dB Compression Point versus Frequency 1900 MHz LNA
-40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
Input Power at 1 dB Compression (dBm)
Input Power at 1 dB Compression (dBm)
940.0 945.0 950.0 955.0 960.0
-2.0 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 -11.0 -12.0 -13.0 -14.0 -15.0 925.0
-8.0 -9.0 -10.0 -11.0 -12.0 -13.0 -14.0 -15.0 -16.0 -17.0 -18.0
930.0
935.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
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Rev B3 DS040114
RF2363
32.0 31.0 30.0 29.0 28.0 27.0 -40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
Output 3rd Order Intercept Point versus Frequency 900 MHz LNA
30.0 29.0 28.0 27.0 26.0 25.0
Output 3rd Order Intercept Point versus Frequency 1900 MHz LNA
OIP3 (dBm)
26.0 25.0 24.0 23.0 22.0 21.0 20.0 19.0 18.0 925.0 930.0 935.0 940.0 945.0 950.0
OIP3 (dBm)
24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 -40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
955.0
960.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
12.0 11.0 10.0 9.0
Current versus Supply Voltage 900 MHz LNA
900 LNA, -40C 900 LNA, +25C 900 LNA, +85C
14.0 13.0 12.0 11.0
Current versus Supply Voltage 1900 MHz LNA
1900 LNA, -40C 1900 LNA, +25C 1900 LNA, +85C
Current (mA)
7.0 6.0 5.0 4.0 3.0 2.0 2.5 2.7 2.9 3.1 3.3 3.5
Current (mA)
8.0
10.0 9.0 8.0 7.0 6.0 5.0 4.0 2.5 2.7 2.9 3.1 3.3 3.5
Supply Voltage (VDC)
Supply Voltage (VDC)
Rev B3 DS040114
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RF2363
900MHz LNA
1.0
0 .6
Input impedance
Swp Max 2.5GHz
2. 0
Output impedance
0.8
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
0.5 MHz
.0 -2
-0.
6
Swp Min 0.5GHz
-0.8
1900MHz LNA
1.0
0 .6
-1.0
Input impedance
Swp Max 2.5GHz
2.0
1850 MHz
1850 MHz
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
- 0. 6
.0 -2
Swp Min 0.5GHz
-0.8
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-1.0
-5.0
-0.2
0.5 MHz
0
-10.0
- 4.
-3 .0
0.
Output impedance
0.8
0 3.
4 .0
5.0
0.2
-5.0
-0.2
950 MHz
-3 .0
-10.0
-4. 0
0. 4
3.0
4 .0
5 .0
0.2
950 MHz
10.0
4
10.0
Rev B3 DS040114
RF2363
Rev B3 DS040114
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2363
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Rev B3 DS040114

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