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NZQA5V6XV5T1G Series Quad Array for ESD Protection
This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Specification Features http://onsemi.com
* SOT-553 Package Allows Four Separate Unidirectional * * * * * * * * *
Configurations Low Leakage < 1 mA @ 3 V for NZQA5V6XV5T1G Breakdown Voltage: 5.6 V - 6.8 V @ 1 mA ESD Protection Meeting IEC61000-4-2 - Level 4 These are Pb-Free Devices
SOT-553 CASE 463B PLASTIC
MARKING DIAGRAM
xx MG G xx = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
Mechanical Characteristics
Void Free, Transfer-Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 100% Lead Free, MSL1 @ 260C Reflow Temperature
1 2 3
5
4
ORDERING INFORMATION
Device Package Shipping
NZQA5V6XV5T1G SOT-553 4000 / Tape & Reel (Pb-Free) NZQA5V6XV5T3G SOT-553 (Pb-Free) 16000 / Tape & Reel
NZQA6V2XV5T1G SOT-553 4000 / Tape & Reel (Pb-Free) NZQA6V8XV5T1G SOT-553 4000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2007
April, 2007 - Rev. 3
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Publication Order Number: NZQA5V6XV5T1/D
NZQA5V6XV5T1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK IPP VC VBR VRWM IR VF IT V IF I
Uni-Directional
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic Peak Power Dissipation (8 X 20 ms @ TA = 25C) (Note 1) Steady State Power - 1 Diode (Note 2) Thermal Resistance Junction to Ambient Above 25C, Derate Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge MIL STD 883C - Method 3015-6 IEC1000-4-2, Air Discharge IEC1000-4-2, Contact Discharge Symbol PPK PD RqJA TJmax TJ Tstg VPP Value 100 300 370 2.7 150 -55 to +150 16 16 9 260 Unit W mW C/W mW/C C C kV
Lead Solder Temperature (10 seconds duration)
TL
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25C)
Breakdown Voltage VBR @ 1 mA (Volts) Min 5.32 5.89 6.46 Nom 5.6 6.2 6.8 Max 5.88 6.51 7.14 Leakage Current IRM @ VRM VRWM 3.0 4.0 4.3 IRWM (mA) 1.0 0.5 0.1 Typ Capacitance @ 0 V Bias (Note 3) (pF) 90 80 70 Max VF @ IF = 200 mA (V) 1.3 1.3 1.3
Device NZQA5V6XV5T1G NZQA6V2XV5T1G NZQA6V8XV5T1G
Device Marking 56 62 68
VC Max @ IPP VC (V) 10.5 11.5 12.5 IPP (A) 10 9.0 8.0
1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25C
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NZQA5V6XV5T1G Series
110 % OF RATED POWER OR IPP 100 90 PERCENT OF IPP 80 70 60 50 40 30 20 10 0 c-t td = IPP/2 WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 110 100 90 80 70 60 50 40 30 20 10 0
0
5
10
15 t, TIME (ms)
20
25
30
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (C)
Figure 1. Pulse Waveform
Figure 2. Power Derating Curve
14 VC, CLAMPING VOLTAGE (V) 12 10 8 6 4 2 0 1 3 5 7 9 10 11 12.5 13.5 NZQA5V6XV5T1 NZQA6V8XV5T1 C, CAPACITANCE (pF) NZQA6V2XV5T1
100 90 80 70 60 50 40 30 20 10 0
5.3
5.6
5.9
6.2
6.5
6.8
7.1
IPP, PEAK PULSE CURRENT (A)
VBR, BREAKDOWN VOLTAGE (V)
Figure 3. Clamping Voltage versus Peak Pulse Current
Figure 4. Typical Capacitance
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NZQA5V6XV5T1G Series
PACKAGE DIMENSIONS
SOT-553, 5 LEAD CASE 463B-01 ISSUE B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b c D E e L HE MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 MIN 0.50 0.17 0.08 1.50 1.10 INCHES NOM MAX 0.022 0.024 0.009 0.011 0.005 0.007 0.063 0.067 0.047 0.051 0.020 BSC 0.004 0.008 0.012 0.059 0.063 0.067 MIN 0.020 0.007 0.003 0.059 0.043
D -X-
5 4
A
L
1
2
3
E -Y- b 5 PL 0.08 (0.003)
HE
e
c
M
XY
SOLDERING FOOTPRINT*
0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394
STYLE 1: STYLE 2: PIN 1. BASE PIN 1. CATHODE 2. EMITTER 2. COMMON ANODE 3. BASE 3. CATHODE 2 4. COLLECTOR 4. CATHODE 3 5. COLLECTOR 5. CATHODE 4
0.5 0.5 0.0197 0.0197
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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NZQA5V6XV5T1/D

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