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| Transys Electronics LIMITED TO-126 (SOT-32) Plastic Package MJE270, MJE271 MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 20 mA; IB = 0.2 mA D.C. current gain IC = 20 mA; VCE = 3 V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min. 100 100 2.0 15 150 V V A W C 2.0 V 500 VCBO VCEO max. max. 100 V 100 V MJE270, MJE271 Emitter-base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation up to TC = 25C Derate above 25C Total power dissipation up to TA = 25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient CHARACTERISTICS T amb = 25C unless otherwise specified Collector cutoff current IE = 0; VCB = 100 V IB = 0; VCE = 100 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 10 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 20 mA; IB = 0.2 mA IC = 120 mA; IB = 1.2 mA Base emitter on voltage IC = 120 mA; VCE = 10V D.C. current gain IC = 20 mA; VCE = 3 V IC = 120 mA; VCE = 10 V Transition frequency f = 1 MHz IC = 0.05 A; VCE = 5 V Second Breakdown Collector Current with base Forward Biased VCE = 40V; t = 1.0s; (non-repetitive) (1) fT = |hfe|* ftest * Pulse test: pulse width 300 s; duty cycle 2%. VEBO IC IC IB Ptot Ptot Tj T stg Rth j-c Rth j-a max. 5.0 max. 2.0 max. 4.0 max. 0.1 max. 15 max. 0.12 max. 1.5 max. 0.012 max. 150 -65 to +150 V A A A W W /C W W /C C C 8.33 C W / 83.3 C W / ICBO ICEO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VBE(on)* hFE* hFE* fT (1) max. max. max. min. min. min. max. max. max. min. min. min. 0.3 mA 1.0 mA 0.1 mA 100 V 100 V 5V 2.0 V 3.0 V 2.0 V 500 1500 6.0 MHz I S/b min. 375 mA |
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